Kabushiki Kaisha Toshiba

Yumi Hayashi

Hiroaki Yamazaki

Takamasa Usui

Yosuke Akimoto

Noriaki Matsunaga

Makoto Wada

Tadayoshi Watanabe

Atsuko Sakata

Hiroshi Toyoda

Kei Watanabe

Shinichi Nakao

Hiroyoshi Tanimoto

Kazumichi Tsumura

Hayato Nasu

Yoshihiko Kurui

Ping Wang

Akihiro Kojima

Tamio Ikehashi

Naofumi Nakamura

Jun Deguchi

Kei Masunishi

Daiki Ono

Yusaku Asano

Hiroko Miki

Fumitaka Ishibashi

Naoki Hiramatsu

According to one embodiment, a sensor includes a detection device, a switch circuit, and a detection circuit. The detection device includes a first detection section and a second detection section. The first detection section includes a first detection element. The first detection element includes a first conductive member and a first resistance member. The second detection section includes a second detection element. The second detection element includes a second conductive member and a second resistance member. In a first operation, the switch circuit is configured to supply a first current to the first conductive member and not to supply the first current to the second conductive member, and the detection circuit is configured to output a first signal corresponding to a difference between a first electrical resistance of the first resistance member and a second electrical resistance of the second resistance member.

Sensor and sensor system

According to one embodiment, a sensor includes a structure. The structure includes a first layer, a first film including a first film region, and a first intermediate layer including a first partial region. The first partial region is between the first layer and the first film region. A volume of the first layer is changeable depending on a detection target around the structure. The first film includes silicon and oxygen. The first intermediate layer includes at least one selected from the group consisting of Pd, Pt and Ti.

Sensor

According to one embodiment, a sensor includes a detection device and a circuit portion. The detection device includes a first detection portion and a second detection portion. The first detection portion includes a first detection element. The first detection element includes a first conductive member and a first detection member. The second detection portion includes a second detection element. The second detection element includes a second conductive member and a second detection member. The circuit portion is configured to execute a first detection portion operation for outputting a first detection result corresponding to a first detection value based on the first detection member when a first current is supplied to the first conductive member. In a case where a first evaluation value is not within a first range, the circuit portion is configured to execute a second detection portion operation by the second detection portion.

Sensor and sensor system including multiple detection portions

According to one embodiment, a sensor includes a sensor part including a first film, and a structure body including a second film. The first film has a first density, and a first concentration of a first element. The second film has at least one of a second density, or a second concentration of the first element. The second concentration is greater than the first concentration. The second density is greater than the first density.

Sensor and method for calibrating sensor

According to one embodiment, a sensor includes a sensor part including a first film. The first film includes a first element including at least one selected from the group consisting of Pd, Pt, and Au. The first film includes a first region, and a second region including a plurality of protrusions. A protruding direction of the protrusions is along a first direction from the first region toward the second region.

Sensor and method for manufacturing the same

According to one embodiment, a gas sensor includes a fixed electrode, and a film structure which covers the fixed electrode, forms a cavity inside the film structure, and includes a sensitive layer formed of an amorphous material containing a metal element, and a cap layer provided on the sensitive layer. The film structure is allowed to be deformed when the sensitive layer absorbs a predetermined gas.

Gas sensor

In one embodiment, a gas sensor includes a sensing layer having a first region containing PdCuSi, and a second region which is provided outside the first region and contains PdCu.

According to one embodiment, a sensor includes a first sensor part. The first sensor part includes a first counter electrode, a first movable electrode, a first layer, and a first intermediate layer. The first movable electrode is between the first counter electrode and the first layer. The first intermediate layer is between the first movable electrode and a portion of the first layer. A first gap is located between the first counter electrode and the first movable electrode. A distance between the first counter electrode and the first movable electrode changes according to a concentration of a gas around the first sensor part. The first layer includes a crystal. The first intermediate layer is amorphous, or a crystallinity of the first intermediate layer is less than a crystallinity of the first layer. A width of the first layer is greater than a width of the first intermediate layer.

According to one embodiment, a sensor includes a base body, and a first sensor part. The first sensor part includes fixed and movable electrode members, and first and second support members. The fixed electrode member includes a fixed electrode fixed to the base body. The movable electrode member includes a movable electrode. The movable electrode member includes first and second movable portions, and a third movable portion between the first and second movable portions. The first support member is fixed to the base body and connected with the first movable portion. The second support member is fixed to the base body and connected with the second movable portion. The first and second support members support the movable electrode member to provide a first gap between the fixed and movable electrode members. The fixed electrode member includes first, second, and third fixed electrode portions facing the movable portion.

Sensor and sensor module

According to one embodiment, a gas sensor includes a film structure including a gas sensitive film and a heater film heating the gas sensitive film, a physical quantity sensing section sensing a predetermined physical quantity which varies based on storage of a gas to be carried out by the gas sensitive film, a voltage generation section generating a first voltage for heating the gas sensitive film at a first temperature and a second voltage for heating the gas sensitive film at a second temperature higher than the first temperature, and a voltage switching section switching between the first voltage and the second voltage to be supplied to the heater film.

Gas sensor including sensing section for sensing predetermined physical quantity and voltage switching section for switching between voltages for heating gas sensitive film

According to one embodiment, a MEMS device includes a variable capacitor including a lower electrode fixed to a substrate and a movable upper electrode provided above the lower electrode, a pressure-sensitive section covering the variable capacitor and connected to the upper electrode, configured to displace according to a pressure applied, and a protective structure provided on an outer side of the pressure-sensitive section.

MEMS device with protective structure

According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a first and second MEMS elements on the substrate. Each of the first and second MEMS elements includes a fixed electrode on the substrate, a movable electrode above the fixed electrode, a first insulating film, the first insulating film and the substrate defining a cavity in which the fixed and movable electrodes are contained, and a first anchor on a surface of the first insulating film inside the cavity and configured to connect the movable electrode to the first insulating film. The cavity of the first MEMS element is closed. The cavity of the second MEMS element is opened by a through hole.

MEMS device

In one embodiment, a method of manufacturing a semiconductor device includes sequentially forming a first insulator, a second insulator, and a sacrificial layer on a semiconductor substrate, and forming plural core materials from the sacrificial layer and the second insulator. The method further includes forming first and second interconnects on side surfaces of each core material to form plural first interconnects and plural second interconnects alternately, each first interconnect having a first side surface in contact with a core material and a second side surface positioned on an opposite side of the first side surface, and each second interconnect having a third side surface in contact with a core material and a fourth side surface positioned on an opposite side of the third side surface. The method further includes removing the sacrificial layer so that the second insulator remains, after the first and second interconnects are formed.

Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device includes a first insulating layer provided in a first area and in a second area, a line-and-space-like second insulating layer formed on the first insulating layer provided in the first area, and a third insulating layer formed on the first insulating layer provided in the second area and which is substantially identical to the second insulating layer in height.

Semiconductor device and method for manufacturing the same

A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300&#xb0; C.

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Kanagawa, Japan

Yumi Hayashi