Kabushiki Kaisha Toshiba

Yokohama National University

Samsung Electronics Co., Ltd.

Alpad Corporation

Yumi Fukuda

Naotoshi Matsuda

Keiko Albessard

Iwao Mitsuishi

Aoi Okada

Masahiro Kato

Shinya Nunoue

Ryosuke Hiramatsu

Hironori Asai

Yasushi Hattori

Kunio Ishida

Katsutoshi Komeya

Masaaki Tamatani

Toru Wakihara

Masayuki Saito

Takahiro Sato

Masahiko Yamamoto

Miki Mori

Junichi Tatami

Goh Itoh

Hitoshi Kobayashi

Yujiro Hara

Kenji Essaki

Koji Asakawa

Toshiki Hikosaka

Toshiro Hiraoka

Yasuhiro Goto

Maki Yonetsu

Jun-ichi Tatami

Koji Suzuki

Tatsuro Uchida

Haruhiko Okumura

Shigeya Kimura

Seiichi Suenaga

Akira Kinno

Koichi Harada

Atsuko Iida

Masayuki Nakamoto

Hisao Fujiwara

Takeshi Miyagi

Yukio Kizaki

Yoshiki Ishizuka

Shoko Abe

Tohru Wakihara

Aoi Okoda

According to one embodiment, a structure according to the embodiment includes a β type silicon nitride type crystal phase and a YSiONtype crystal phase. In an X-ray diffraction pattern according to a θ-2θ method of the structure, a ratio of a second peak intensity being maximum and appearing at 2θ=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2θ=27.03±0.1° is 0.005 or more and 0.20 or less.

Structure and bonded body

A structure includes: a &#x3b2; silicon nitride crystal phase; and a YMgSiON crystal phase. The structure gives a X-ray diffraction pattern by a &#x3b8;-2&#x3b8; method, the pattern having a ratio of a peak intensity of a (22-1) plane of the YMgSiON crystal phase to a peak intensity of a (200) plane of the &#x3b2; silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2&#x3b8;=27.0&#xb1;1&#xb0;, the peak intensity of the (22-1) plane being determined at a position of 2&#x3b8;=30.3&#xb1;1&#xb0;, and the ratio being 0.001 or more and 0.01 or less.

Structure and joined composite

The embodiments provide a radiation detection material emitting fluorescence with high intensity and short lifetime, and also provide a radiation detection device. The polycrystalline radiation detection material of the embodiment is represented by the following formula (1)TlMRX&#x2003;&#x2003;(1).In the formula, M is at least one metal element selected form the group consisting of Ca, Sr, Ba and Mg; R is at least one luminescence center element selected form the group consisting of Ce, Pr, Yb and Nd; X is at least one halogen element selected form the group consisting of Cl, Br and F; and x, y and z are numbers satisfying the conditions of

Radiation detection material and radiation detection device

The embodiment of the present disclosure provides a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity. The phosphor is a silicofluoride phosphor and shows an IR absorption spectrum satisfying the conditions of 0&#x2264;I/I&#x2264;0.01 and 6.7&#x2264;(I/I)/C. In those conditional formulas, I, Iand Iare intensities of the maximum peaks in the ranges of 1200 to 1240 cm, 3570 to 3610 cmand 635 to 655 cm, respectively, and Cis a weight percent of Mn contained the phosphor.

Phosphor, producing method thereof and light-emitting device employing the phosphor

A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the fluorescence shifting in the same direction when a peak wavelength of the blue excitation light shifts. The first phosphor is one of a yellow phosphor emitting yellow fluorescence, a green phosphor emitting green fluorescence, a yellow-green/yellow phosphor emitting yellow-green/yellow fluorescence and a red phosphor emitting red fluorescence.

Light-emitting device with phosphor excited by blue excitation light

A light emitting device according to embodiments includes a light emitting element emitting light with a peak wavelength of 420&#x2dc;445 nm, a first phosphor emitting light with a peak wavelength of 485&#x2dc;530 nm, a second phosphor emitting light with a peak wavelength of 530&#x2dc;580 nm, and a third phosphor emitting light with a peak wavelength of 600&#x2dc;650 nm. The device emits light having an emission spectrum that has a local minimum value of light intensity between a wavelength of 450&#x2dc;470 nm or less, the local minimum value being 60% or less of a maximum value of light intensity at a longer wavelength side from the local minimum value, and the device emits light having a color temperature of 4600 K or higher and 5400 K or less.

Light emitting device with oxynitride phosphors

A light emitting device according to embodiments includes a light emitting element emitting light having a peak wavelength of 425 nm or more and 465 nm or less, a first phosphor emitting light having a peak wavelength of 485 nm or more and 530 nm or less, a second phosphor emitting light having a peak wavelength longer than that of the first phosphor, and a third phosphor emitting light having a peak wavelength longer than that of the second phosphor. Then, when the peak wavelength of the light emitting element is &#x3bb;(nm) and the peak wavelength of the first phosphor is &#x3bb;(nm), a relation of 30&#x2266;&#x3bb;&#x2212;&#x3bb;&#x2266;70 is satisfied.

Light emitting device

The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1):(MEu)AlSiONC&#x2003;&#x2003;(1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0&#x3c;x&#x3c;0.2, 1.3&#x2266;a&#x2266;1.8, 3.5&#x2266;b&#x2266;4, 0.1&#x2266;c&#x2266;0.3, 6.7&#x2266;d&#x2266;7.2 and 0.01&#x2266;e&#x2266;0.1, respectively.

Phosphors and method for producing thereof

According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a composition represented by Formula 1 below:(MCe)AlSiON&#x2003;&#x2003;Formula 1wherein M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy following conditions:

Luminescent material

According to one embodiment, the luminescent material emits light with an emission peak within a wavelength range of 490 to 580 nm when excited with light having a wavelength range of 250 to 500 nm and includes a particle containing a SrSiAlON-based crystal activated by Eu. The particle includes an outer region which is within a depth of 5 nm from a surface of the particle and an inner region which is deeper than the outer region. The outer region and the inner region satisfy a ratio O/Oof 1.0 to 3.8. Ois an average of oxygen concentration in the outer region and Ois an average of oxygen concentration in the inner region.

According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 490 to 580 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a diffraction peak intensity of the largest peak detected at 2&#x3b8;=30.1-31.1&#xb0; that is higher than the diffraction peak intensity of the peak detected at 2&#x3b8;=25.0-26.0&#xb0; in X-ray diffraction by the Bragg-Brendano method using Cu-K&#x3b1; line and its composition is represented by (SrEu)AlSiON(a part of the Sr may be substituted by at least one selected from Ba, Ca, Mg and Na, 0&#x3c;x&#x2266;1, &#x2212;0.1&#x2266;y&#x2266;0.3, &#x2212;3&#x2266;z&#x2266;&#x2212;0.52, and &#x2212;1.5&#x2266;u&#x2266;&#x2212;0.3, &#x2212;3&#x3c;u&#x2212;w&#x2266;1).

The fluorescent substance according to the present disclosure emits luminescence with a peak in the wavelength range of 500 to 600 nm under excitation by light with a peak in the wavelength range of 250 to 500 nm, and has an optical absorption coefficient &#x3b1;of 4&#xd7;10or less at 560 nm. The substance is represented by the following formula (1):(MCe)AlSiON&#x2003;&#x2003;(1).In the formula, M is a metal element selected from the group consisting of Ba, Sr, Ca, Mg, Li, Na and K; and x, y, z, u and w are variables satisfying the conditions of 0&#x3c;x&#x2266;1, 0.8&#x2266;y&#x2266;1.1, 2&#x2266;z&#x2266;3.5, u&#x2266;1, 1.8&#x2266;z&#x2212;u and 13&#x2266;u+w&#x2266;15, respectively.

Fluorescent substance, light-emitting device and method for producing fluorescent substance

According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of SrSiAlON. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008&#x2266;M/(M+M)&#x2266;0.114, where Mis a number of moles of Ca and Mis a number of moles of Sr.

According to one embodiment, the phosphor exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The phosphor has a composition represented by (MCe)AlSiON(M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy 0&#x3c;x&#x2266;1, 0.8&#x2266;y&#x2266;1.1, 2&#x2266;z&#x2266;3.5, 0&#x3c;u&#x2266;1, 1.8&#x2266;z&#x2212;u, and 13&#x2266;u+w&#x2266;15). The phosphor has a crystalline aspect ratio of 1.5 to 10.

Phosphor

A light emitting device includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the equation, ((MEu)SiAlON), and an average particle diameter of 12 &#x3bc;m or more, wherein in the equation, M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements, and x1, y, z, u, and w satisfy each of the inequalities simultaneously, that is to say each of the following inequalities is satisfied by the choice of values of the identified paramaters within the noted ranges of 0&#x3c;x1&#x3c;1, &#x2212;0.1&#x3c;y&#x3c;0.3, &#x2212;3&#x3c;z&#x2266;1, &#x2212;3&#x3c;u&#x2212;w&#x2266;1.5, 2&#x3c;u, w&#x3c;21.

Light emitting device and manufacturing method thereof

Growing community of inventors

Tokyo, Japan

Yumi Fukuda