Fuji Electric Co., Ltd.

Yuma Murata

Ryoichi Kato

Yoshinari Ikeda

Naoyuki Kanai

Akito Nakagome

Shinji Tada

Tadahiko Sato

Katsumi Taniguchi

Yuichiro Hinata

Takashi Saito

Ryotaro Tsuruoka

A semiconductor module includes an insulating sheet which has a first surface and extends in a first direction and a first terminal. The first terminal has a first region disposed on the first surface of the insulating sheet and having a first width in a second direction perpendicular to the first direction, a second region extending from the first region and having a second width in the second direction narrower than the first width, and a third region located away from the first surface and being electrically connected to both the first region and the second region.

Semiconductor module, semiconductor device, and semiconductor device manufacturing method

A semiconductor module includes a first case having a first side face, a first insulating paper disposed on the first case and having a first width in a first direction and having a notch with a second width smaller than the first width, a first terminal between the first case and the first insulating paper, having an exposed portion exposed from the first insulating paper at an area where the notch is formed, and a second terminal on the first insulating paper at a side opposite to a side where the first terminal is disposed. The first terminal and the first insulating paper have extended portions extending to an outside of the first case from the first side face so that a portion of the first insulating paper where the notch is formed and the exposed portion of the first terminal are located at the outside of the first case.

Semiconductor device and semiconductor device manufacturing method

There is provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where connection sections used for the connection to semiconductor elements are arranged. A semiconductor module includes: an outer frame; sealing resins; gate signal output terminals, and partition sections laid across the outer flame to partition a space into a plurality of housing sections, in the partition sections which the gate signal output terminals with connection sections exposed are arranged. The partition sections have first surface sections on the side where the connection sections are arranged and second surface sections formed, on the side where the connection sections are not arranged, such that the peeling strength to the sealing resins is lower than that of the first surface sections.

Semiconductor module

Provided is a semiconductor module that can improve the insulation properties at terminals to which electric power is supplied. A semiconductor module includes a negative electrode terminal connected to a negative electrode side of direct current power; a positive electrode terminal disposed above the negative electrode terminal and connected to a positive electrode side of the direct current power in a state where an exposed portion of the negative electrode terminal including one end of the negative electrode terminal is exposed; an insulating sheet disposed between the negative electrode terminal and the positive electrode terminal for insulation between the negative electrode terminal and the positive electrode terminal in a state where an exposed portion of the insulating sheet is exposed between the one end of the negative electrode terminal and one end of the positive electrode terminal; and a first dielectric portion formed to cover at least a corner of the one end of the positive electrode terminal, the corner being in contact with the insulating sheet.

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

Semiconductor device comprising a capacitor

A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.

Semiconductor device having an insulating sheet and a conductive film, and method of manufacturing the same

A method for manufacturing a semiconductor device includes obtaining a shear stress Fat which that a value obtained by dividing a loss elastic modulus by a storage elastic modulus equals 1 for each of a plurality of candidate heat conductive greases at each of a plurality of temperatures that are within a prescribed control temperature range determined based on an operation temperature range of the semiconductor device to be manufactured; selecting a heat conductive grease, among the plurality of candidate heat conductive greases, that has a value of Fof 100 Pa or more and 200 Pa or less at each of the plurality of the temperatures within the prescribed control temperature range; and attaching a resin sealed body that includes a semiconductor element mounted on a laminated substrate therein to a cooler via the heat conductive grease that has been selected in the selecting.

Manufacturing method of semiconductor device

A semiconductor module includes a resin case housing a semiconductor element; an insulating layer extending outward from the resin case; and a first external connection terminal extending outward from the resin case, arranged above the insulating layer so as to face the insulting layer, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in a thickness direction of the insulating layer at a position overlapping the insulating layer in a plan view.

Semiconductor module comprising a resin case and an external connection terminal

A semiconductor device, including a capacitor, a semiconductor module having a first power terminal formed on a front surface of a first insulating member, and a connecting member electrically connecting and mechanically coupling the semiconductor module and the capacitor to each other, the connecting member having a front surface and a rear surface opposite to each other, the rear surface being on a front surface of the first power terminal. The connecting member is bonded to the semiconductor module via a first welded portion, which penetrates the front and rear surfaces of the connecting member, and penetrates the front surface of the first power terminal, in a thickness direction of the semiconductor device, a distance in the thickness direction between a bottommost portion of first welded portion and the front surface of the first insulating member being 0.3 mm or more.

Semiconductor device with a laser-connected terminal

A semiconductor module includes first to fourth semiconductor elements, each having an upper-surface electrode and a lower-surface electrode, first to fourth conductive layers, each extending in a first direction and being independently disposed side by side in a second direction orthogonal to the first direction, and an output terminal connected to the second and third conductive layers. The lower-surface electrodes of each of the first to fourth semiconductor elements are respectively conductively connected to the first to fourth conductive layers. The third conductive layer and the fourth conductive layer are disposed between the first conductive layer and the second conductive layer and are connected to the output terminal to have an equal potential.

A semiconductor module includes an insulating substrate having a main wiring layer, positive and negative electrode terminals adjacently arranged in a first direction, a plurality of semiconductor elements forming a first column and another plurality of semiconductor elements forming a second column, each semiconductor element having gate and source electrode on an upper surface thereof, and being disposed on the main wiring layer such that corresponding ones of the gate electrodes in the first and second columns face each other in a second direction orthogonal to the first direction, a control wiring substrate between the first and second columns and having gate and source wiring layers, a gate wiring member connecting ones of the gate electrodes in the first and second columns through the gate wiring layer, and a source wiring member connecting ones of the source electrodes in the first and second columns through the source wiring layer.

A semiconductor module includes a first semiconductor element and a second semiconductor element each having an upper-surface electrode and a lower-surface electrode, and being connected in parallel to configure an upper arm, a first conductive layer having a U-shape in planar view, having two end portions, and having an upper surface on which the first semiconductor element and the second semiconductor element are disposed in a mirror image arrangement, a positive electrode terminal having a body part and at least two positive electrode ends branched from the body part, and a negative electrode terminal having a negative electrode end disposed between the positive electrode ends. The positive electrode ends are respectively connected to one of the two end portions of the first conductive layer.

A semiconductor module includes a case with a side wall in a first direction in which gate and source terminals are embodied and exposed therefrom, first and second semiconductor elements each having gate and source electrodes, gate and source relay layers positioned at a center between the first and second semiconductor elements in the first direction at a side of the semiconductor elements farther from the side wall, first gate and source wires respectively connecting the gate and source terminals to the gate and source relay layers, second gate and source wires, and third gate and source wires, respectively connecting the gate and source electrodes of the first semiconductor element, and the gate and source electrode of the second semiconductor element, to the gate and source relay layers. The first to third source wires are respectively located closer to the first to third gate wires than any other gate wires.

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Kawasaki, Japan

Yuma Murata