Lintec Corporation

Yuma Katsuta

Kunihisa Kato

Wataru Morita

Tsuyoshi Muto

Takeshi Kondo

Tsuyoshi Mutou

Masaya Todaka

Masaharu Ito

Taiga Matsushita

Takashi Morioka

A pseudo sheet structure is usable for a sensor configured to emit an electromagnetic wave in a band ranging from 20 GHz to 100 GHz. The pseudo sheet structure includes a plurality of conductive linear bodies arranged at an interval L satisfying a formula (1) below, 0.034×λ≤L≤20 mm (1). In the formula (1), L is the interval between the plurality of conductive linear bodies, λis a wavelength of the electromagnetic wave emitted by the sensor, and a unit for each of L and λis mm.

Pseudo sheet structure, sheet conductive member, and sensor device

Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer () on a substrate (), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Production method for chip made of thermoelectric conversion material and method for manufacturing thermoelectric conversion module using chip obtained by said production method

The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

Manufacturing method of thermoelectric conversion element

A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Thermoelectric conversion material chip manufacturing method, and method for manufacturing thermoelectric conversion module using chip obtained by said manufacturing method

The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

Thermoelectric conversion material and method for producing same

Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.

Electrode material for thermoelectric conversion modules and thermoelectric conversion module using same

To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.

Growing community of inventors

Gyoda, Japan

Yuma Katsuta