Kokusai Electric Corporation

Yuma Ikeda

Kenichi Suzaki

Kazuki Nonomura

There is provided a technique that includes a reaction container configured to process a substrate; a cleaning gas supply system configured to supply a cleaning gas into the reaction container; a lid configured to be capable of closing an opening of the reaction container and made of a metallic material; a protector installed over a surface of the lid at a side facing an inside of the reaction container and including a surface composed of a first non-metallic material; an internal space formed between surfaces of the lid and the protector facing each other; and an inert gas supply system configured to supply an inert gas to the internal space in a state in which the opening is closed by the lid.

Substrate processing apparatus, cleaning method, and method of manufacturing semiconductor device

There is provided a technique that includes: (a) lowering a temperature in a process chamber supplied with a cleaning gas containing a halogen element while being heated to a first temperature, from the first temperature to a second temperature equal to or lower than a temperature at which substrate processing is performed in the process chamber, while vacuum-exhausting an inside of the process chamber; and (b) after (a), supplying a gas containing a water vapor into the process chamber while vacuum-exhausting the inside of the process chamber, to cause the halogen element remaining in the process chamber to react with the water vapor.

Growing community of inventors

Toyama, Japan

Yuma Ikeda