Triquint Technology Holding Co.

Lucent Technologies Inc.

Jds Uniphase Corporation

Agere Systems Optoelectronics Guardian Corp.

Yuliya Anatolyevna Akulova

Abdallah Ougazzaden

Michael Geva

Charles William Lentz

Kenneth Gerard Glogovsky

Mark S Hybertsen

Gregory Alan Fish

Mindaugas Fernand Dautartas

Sung-Nee George Chu

Rudolf Feodor Kazarinov

Justin Larry Peticolas

Marlin Wilbert Focht

A monolithically-integrated semiconductor optical transmitter that can index tune to any transmission wavelength in a given range, wherein the range is larger than that achievable by the maximum refractive index tuning allowed by the semiconductor material itself (i.e. &#x394;&#x3bb;/&#x3bb;&#x3e;&#x394;n/n). In practice, this tuning range is &#x3e;15 nm. The transmitter includes a Mach-Zehnder (MZ) modulator monolithically integrated with a widely tunable laser and a semiconductor optical amplifier (SOA). By using an interferometric modulation, the transmitter can dynamically control the chirp in the resulting modulated signal over the wide tuning range of the laser.

Tunable laser source with monolithically integrated interferometric optical modulator

A multi-layer dopant diffusion barrier is disclosed that effectively prevents dopant diffusion but does not contribute to parasitic pn junctions or parasitic capacitance. A multi-layer dopant diffusion barrier layer prevents dopant diffusion.

Dopant diffusion barrier layer for use in III-V structures

A laser includes an optical cavity resonator having first and second reflectors and an active region interposed between the reflectors. The second reflector includes a resonant optical reflector having an optical gain medium.

Laser with a resonant optical reflector

The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Optoelectronic device having a barrier layer associated therewith and a method of manufacture thereof

The present invention relates to a multi-layer dopant barrier and its method of fabrication for use in semiconductor structures. In an illustrative embodiment, the multi-layer dopant barrier is disposed between a first doped layer and a second doped layer. The multi-layer dopant barrier further includes a first dopant blocking layer adjacent the first doped layer and a second dopant blocking layer adjacent the second doped layer. A technique for fabricating the multi layer dopant barrier is disclosed. A first dopant blocking layer is formed at a first temperature, and a second dopant blocking layer is formed at a second temperature over the first barrier layer.

Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication

A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs

A beam expander for providing coupling between a semiconductor optical device and an optical fiber comprises a double layer structure that may be integrated with the optical device. The first, underlying layer of the expander comprises a relatively high refractive index material (e.g., 3.34), thus providing improved coupling efficiency between the optical device and the fiber. The second, covering layer of the expander comprises a relatively low refractive index material (e.g., 3.28), for providing the large mode size desired at the fiber input. The parameters of each layer can be adjusted independently, allowing for the two criteria (coupling efficiency and mode size) to be separately optimized.

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Allentown, PA, United States of America

Yuliya Anatolyevna Akulova