Beijing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Peking University

Yulin Feng

Yue Li

Xue Cao

Yuelei Xiao

Yifan Wu

Qichang An

Biqi Li

Wenbo Chang

Huiying Li

Kidong Han

Lihui Wang

Feng Qu

Chuncheng Che

Peng Huang

Hao Yan

Xiaoyan Liu

Yi Zhou

Lifeng Liu

Jinfeng Kang

Qiuxu Wei

Yanfei Ren

Yizhou Zhang

An electronic device includes a substrate having a first surface and a second surface opposite to each other in a thickness direction of the substrate, wherein the substrate has first and second connection vias which penetrate through the substrate in the thickness direction of the substrate, and first and second conductive pillars are respectively in the first connection via and the second connection via; a switch on the first surface of the substrate and comprising first and second signal electrodes, wherein the first signal electrode is electrically coupled to a first terminal of the first conductive pillar, and the second signal electrode is electrically coupled to a first terminal of the second conductive pillar; and a filter on the second surface of the substrate.

Electronic device and method of fabricating the same

An electronic device is provided. The electronic device includes electric components in an effective area; and a retaining structure substantially surrounding a boundary of the effective area. The electronic device includes a base substrate, and multiple conductive layer and multiple insulating layers alternately stacked on the base substrate. The retaining structure is configured to enhance adhesion between conductive layers adjacent to each other in the electronic device. The retaining structure includes one or more retaining layers. A respective retaining layer of the one or more retaining layers is in direct contact with at least one insulating layer of the electronic device.

Electronic device and method of fabricating electronic device

A MEMS switch includes an insulating substrate, a driving electrode, a first insulating layer, a first surface of the insulating substrate is provided with a first region, the first region is closer to a surface of the insulating substrate away from the first surface, relative to the first surface, and the driving electrode is on the first region; the first insulating layer completely covers the driving electrode; the first signal transmission line is on a surface of the first insulating layer away from the insulating substrate; and the second signal transmission line includes a signal transmission segment and a cantilever segment connected together as a one-piece member, the signal transmission segment is on the first surface of the insulating substrate, and the cantilever segment is suspended on a side of the first signal transmission line away from the insulating substrate.

MEMS switch and method of manufacturing the same

A filter circuit includes a first resonant sub-circuit, a second resonant sub-circuit and an impedance matching network; the first resonant sub-circuit and the second resonant sub-circuit are each connected to the impedance matching network in series; the first resonant sub-circuit is configured to allow a signal with a frequency higher than a first frequency to pass; the second resonant sub-circuit is configured to allow a signal with a frequency lower than a second frequency to pass, and the second frequency is greater than the first frequency; the impedance matching network is configured to allow a signal between the first frequency and the second frequency to pass; the impedance matching network includes a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor and a first inductor.

Filter circuit, filter, method of manufacturing filter, and electronic device

An operating circuit and an operating method of a resistive random-access memory are provided, the operating circuit includes: at least one capacitance connected in series with the resistive random-access memory, so that the resistive random-access memory is grounded through the at least one capacitance. The operating method includes: connecting at least one capacitance in series with a resistive random-access memory, so that the resistive random-access memory is grounded through the capacitance; applying a forming pulse voltage or a set pulse voltage on the resistive random-access memory to achieve a forming operation or a set operation of the resistive random-access memory.

Operating circuit and operating method of resistive random access memory

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Beijing, China

Yulin Feng