Intel Corporation

Yulan Zhang

Theodore Zale Schoenborn

David Zimmerman

Bruce Querbach

David G Ellis

William K Lui

Christopher W Hampson

Ifar Wan

Ramakrishna Mallela

David J Zimmerman

In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets.

Integrated circuit defect detection and repair

In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory.

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Hillsboro, OR, United States of America

Yulan Zhang