National Institute of Advanced Industrial Science and Technology

Hitachi Chemical Company, Ltd.

Director-general of Agency of Industrial Science and Technology

National Institute of Advanced Industrial Science

Technology Mitsubishi Denki Kabushiki Kaisha

Yuko Uchimaru

Makoto Kaji

Hiroshi Matsutani

Koichi Abe

Masami Inoue

Masato Tanaka

Shigeru Shimada

Interlayer insulating films(insulating films) provided in a memory capacitor cellare formed between a gate electrodeand a counter electrodeC formed on a silicon wafer. The interlayer insulating filmscomprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1&#xd7;10A/cm.

Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation

Interlayer insulating films(insulating films) provided in a memory capacitor cellare formed between a gate electrodeand a counter electrodeC formed on a silicon waferThe interlayer insulating filmscomprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1&#xd7;10A/cm.

Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating

The use of a material possessing a six-member borazine ring consisting of at least boron and nitrogen elements in the form of a low dielectric constant insulating film in a hard mask, a Cu diffusion barrier layer and an etching stopper which are necessary when low dielectric constant interlayer insulating films and Cu wiring in the multilayer interconnection of an LSI allows the parasitic capacity between the multilayer wirings to be suppressed and enables the ULSI to produce a high-speed operation.

Low dielectric constant insulating material and semiconductor device using the material

A low-dielectric-constant interlayer insulating film, which is composed of at least one selected from the group consisting of: (i) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B',B&#x2033;-triethynyl-N,N&#x2032;,N&#x2033;-trimethylborazine with a specific silicon compound having at least two hydrosilyl groups; and (ii) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B&#x2032;,B&#x2033;-triethynyl-N,N&#x2032;,N&#x2033;-trimethylborazine with a specific cyclic silicon compound having at least two hydrosilyl groups. A semiconductor device, which has the low-dielectric-constant interlayer insulating film. A low-refractive-index material, which is composed of the polymer substance (i) and/or (ii).

Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device

There is disclosed a method for effectively producing a silicon-containing pentacyclic compound, wherein the method comprises reacting (a) a 1,2-bis(hydrosilyl)benzene with (b) a cyclic diyne in the presence of (c) a platinum compound. There is also disclosed a method for effectively producing a silicon-containing ladder polymer having a complete ladder structure, wherein the method comprises reacting (a) a 1,2,4,5-tetrakis(hydrosilyl)benzene with (b) a cyclic diyne in the presence of (c) a platinum compound.

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Tsukuba, Japan

Yuko Uchimaru