Tdk Corporation

Yuko Saya

Kenji Horino

Osamu Shinoura

Tomohiko Kato

Tomohiko Katoh

Hitoshi Saita

Masahito Furukawa

Taku Masai

Kiyoshi Uchida

Masamitsu Haemori

An electrochemical device comprises an element bodyin which a pair of a first inner electrode and a second inner electrode are laminated to sandwich a separator layer; an exterior sheetcovering the element body; a first lead terminaldrawn to an outside of the exterior sheet; and a second lead terminaldrawn to the outside of the exterior sheet. A proof stress of the exterior sheet is 390 to 980 N/mmin JIS Z2241, and a hardness of the exterior sheet is 230 to 380 Hv in Vickers hardness (JIS Z2244).

Electrochemical device

The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure,(BiNa)(TiMgAlCo)O0.15&#x2266;x&#x2266;0.7, 0.28&#x2266;y&#x2266;0.75, 0.02&#x2266;z&#x2266;0.30, 0.17&#x2266;k&#x2266;0.83, 0.75&#x2266;m&#x2266;1.0, and x+y+z=1.

Piezoelectric composition and piezoelectric element

A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.

Dielectric device and method of manufacturing the same

One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil. A thin-film capacitor has higher capacity, is so slimmed down and has a form well fit for being buried in a base board, and can be used even at high frequencies.

Method of manufacturing capacitor

A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Growing community of inventors

Tokyo, Japan

Yuko Saya