Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Yuko Ohgishi

Takashi Ando

Tetsuji Yamaguchi

Susumu Hiyama

Harumi Ikeda

Itaru Oshiyama

Keiji Mabuchi

Akihiro Yamada

Hideo Kido

Taiichiro Watanabe

Hiromasa Saito

Yasushi Maruyama

Kiyotaka Tabuchi

Atsushi Toda

Toshifumi Wakano

Yusuke Otake

Kenji Azami

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

Solid-state imaging device, drive method thereof and electronic apparatus

A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Solid state imaging device for reducing dark current

Solid state imaging device for reducing dark current, method of manufacturing the same, and imaging apparatus

Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging devicehaving a light-receiving portionto photoelectrically convert incident light is characterized by including a film, which is disposed on a light-receiving surfaceof the above-described light-receiving portionand which lowers an interface state, and a film, which is disposed on the above-described filmto lower the interface state and which has a negative fixed charge, wherein a hole accumulation layeris disposed on the light-receiving surfaceside of the light-receiving portion

Solid-state imaging device, method for manufacturing the same, and imaging apparatus

The present disclosure relates to a solid-state imaging device that can be made smaller in size, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a photoelectric conversion film that performs photoelectric conversion of light emitted from the back surface side of the semiconductor substrate. Also, in each pixel, a charge accumulation layer is formed to be in contact with the photoelectric conversion film on the back surface of the semiconductor substrate, a transfer path unit is formed to extend from the charge accumulation layer to a point near the front surface of the semiconductor substrate, and a memory unit is disposed near the back surface side of the semiconductor substrate, with a charge transfer gate being interposed between the memory unit and the transfer path unit. Then, the photoelectric conversion film is formed by stacking a layer formed with a material having a great light blocking effect on the back surface of the semiconductor substrate. The present technology can be applied to back-illuminated CMOS image sensors in global shutter mode.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Solid state imaging device for reducing dark current and imaging apparatus

A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

Solid state imaging device, method of manufacturing the same, and imaging apparatus

A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accumulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.

Solid-state imaging device, method for producing same, and camera

Solid state imaging device, with suppressed dark current, method of manufacturing, and imaging apparatus

Growing community of inventors

Tokyo, Japan

Yuko Ohgishi