Fujifilm Corporation

Fuji Photo Film Company, Limited

Yuko Nomura

Shinji Uya

Makoto Kobayashi

Katsumi Ikeda

Ryuji Kondo

Tomohiro Sakamoto

A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 &#x3bc;m or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical transfer channels in a horizontal direction.

Solid state image pickup device and its manufacture method

A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.

Manufacturing method of solid-state imaging device and solid-state imaging device

A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

Solid-state imaging device and its driving method for preventing damage in dynamic range

A solid state image pickup device comprising: a semiconductor substrate having a surface layer; charge storage regions disposed in the surface layer; vertical channels disposed in the surface layer adjacent to respective columns of the charge storage regions; vertical transfer electrodes formed above the semiconductor substrate, crossing the vertical channels; a horizontal channel disposed in the surface layer coupled to the vertical channels, having a first portion with transfer stages, each including a barrier region and a well region, and a second portion constituting a gate region with gradually decreasing width, and including an upstream region and a downstream region of different effective impurity concentration, establishing a built-in potential; horizontal transfer electrodes disposed above respective transfer stages of the horizontal channel; an output gate electrode disposed above the gate region; a floating diffusion region disposed in the surface layer coupled to the gate region of the horizontal channel.

Solid state image pickup device

A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.

Growing community of inventors

Miyagi, Japan

Yuko Nomura