Kabushiki Kaisha Toshiba

Yuko Nomura

Isao Takasu

Atsushi Wada

Kohei Nakayama

Fumihiko Aiga

Rei Hasegawa

Isao Amemiya

Hitoshi Nagato

Hideki Nukada

Satomi Taguchi

Hyangmi Jung

Yasuo Hosaka

Koichi Ishii

Yasushi Shinjo

Hideyuki Nakao

Shuzo Hirahara

Teruo Murakami

Kenichi Mori

Tsuyoshi Hioki

Keiji Sugi

Kazuhide Abe

Go Kawata

Yasuharu Hosono

Sara Yoshio

Miho Yoda

Noriko Yamamoto

Mitsuyoshi Kobayashi

Kazuhiko Higuchi

Naoto Kume

According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.

Radiation detector

According to one embodiment, a scintillator includes a first layer. The first layer includes a first organic substance capable of emitting light, and a second organic substance. The second organic substance includes at least one selected from the group consisting of a carbonyl group, phosphine oxide, and a sulfinyl group. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns.

Scintillator and radiation detector

According to one embodiment, a radiation detector includes a first conductive layer including a first conductive region, and a first stacked body. The first stacked body includes a first electrode separated from the first conductive region in the a direction, a first scintillator layer provided between the first conductive region and the first electrode, a first intermediate electrode provided between the first scintillator layer and the first electrode, and a first organic semiconductor layer provided between the first intermediate electrode and the first electrode.

According to one embodiment, a radiation detector includes a detecting part, and a transmitting part. The detecting part is configured to output a signal. The signal corresponds to radiation incident on the detecting part. The transmitting part includes a first conductive layer, a second conductive layer, and an organic layer. The first conductive layer is electrically connected with the detecting part, and is configured to transmit the signal. The second conductive layer is separated from the first conductive layer. At least a portion of the organic layer is between the first conductive layer and the second conductive layer.

According to one embodiment, a photodetector includes a first conductive layer, a second conductive layer, and an organic layer provided between the first conductive layer and the second conductive layer. The organic layer includes a first region and a second region. The second region is provided between the first region and the second conductive layer. The first region includes a first compound and a second compound. The first compound includes a first mother skeleton. The second region includes the first compound and a third compound. The third compound includes the first mother skeleton. The third compound is different from the first compound. The second region does not include the second compound, or a concentration of the second compound in the second region is lower than a concentration of the second compound in the first region.

Photodetector and radiation detector

According to one embodiment, a radiation detector includes a base body, a first radiation detection element, and a second radiation detection element. The base body includes a first surface. The first surface includes first and second partial regions. A first direction from the first partial region toward the second partial region is along the first surface. The first radiation detection element is fixable to the first partial region. The second radiation detection element includes a first detecting part fixable to the second partial region. The first detecting part includes first and second end portions. A second direction from the first end portion toward the second end portion crosses the first surface. The second end portion is between the first end portion and the second partial region in the second direction. The first radiation detection element does not overlap the first end portion in the first direction.

According to one embodiment, a radiation detector includes first and second resin members, a detection part, a wiring part, and a controller. The first resin member includes first and second partial regions, and a third partial region between the first and second partial regions. The second resin member includes fourth and fifth partial regions. The detection part is provided between the first and fourth partial regions. The detection part includes a first conductive layer, a second conductive layer provided between the first conductive layer and the fourth partial region, and an organic semiconductor layer provided between the first and second conductive layers. The wiring part is provided between the third and fifth partial regions. The wiring part includes first and second wiring layers. The controller is fixed to the second partial region. The controller is electrically connected with the first and second wiring layers.

According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction.

A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.

Radiation detector and radiation detection method

According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

Detection element and detector

A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

Detection device and detector

According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 &#x3bc;m or more.

Radiation detector and method for manufacturing the same

According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.

Producing method of radiation detection element and radiation detection element

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.

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Kawasaki, Japan

Yuko Nomura