Fuji Electric Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Fuji Electric Holdings Co., Ltd.

Yuko Nakamata

Yuji Ichimura

Koji Kawaguchi

Naoyuki Kanai

Masaru Nagai

Toshio Hama

Chong Li

Kei Yamaguchi

Yutaka Terao

Kotomi Suzuki

A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented. A semiconductor device comprising a semiconductor elementmounted on a laminated substrateand an electrically conductive connecting member, and a sealing material which seals the semiconductor element and the electrically conductive connecting member, wherein the sealing material includes a sealing layersealing members to be sealed including the laminated substratethe semiconductor elementand the electrically conductive connecting member and including a thermosetting resin, and a protective layercoating the sealing layer and including a silicone rubber, and wherein a value Aof a tensile strength × elongation at break of the sealing layeris less than a value Aof a tensile strength × elongation at break of the protective layerand the Ais 1600 MPa or less.

Semiconductor device

A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies &#x3b1;&#x2265;&#x3b1;&#x3e;&#x3b1;in which &#x3b1;, &#x3b1;, and &#x3b1;represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, &#x3b1;&#x2265;15&#xd7;10/&#xb0; C. in which &#x3b1;represents a composite coefficient of linear thermal expansion of the sealing layers, and E&#x2265;5 GPa or more in which Erepresents a composite Young's modulus of the sealing layers.

A semiconductor device, including: a semiconductor module including a layered substrate on which a semiconductor element is mounted, and a sealing material; and a cooler provided on the semiconductor module via a thermal compound. The thermal compound includes a base oil, microfillers having a ceramic as a main component, and nanofillers having a resin as a main component.

A resin composition is disclosed that includes a thermosetting base resin; a curing agent; an inorganic filler; and at least one fluorine resin powder selected from polyvinylidene fluoride, polychlorotrifluoroethylene, and a tetrafluoroethylene/perfluoro(alkyl vinyl ether)/chlorotrifluoroethylene copolymer, and a semiconductor device which is fabricated by being sealed using a sealant formed of the resin composition.

Resin composition

A resin composite includes a maleimide resin powder and a resin having a glass transition point that is lower that the glass transition point of the maleimide resin. The resin having a glass transition point that is lower than that of the maleimide resin may be an epoxy resin. Then, the resin composite may be cured at the curing temperature of the epoxy resin. The maleimide resin powder is mixed in an amount ranging from 50 weight % to 80 weight % with respect to the epoxy resin.

Resin composite, semiconductor device, and method of manufacturing the semiconductor device

A resin composition has a high glass transition temperature and is highly adhesive to a member made of metal, ceramics, or the like. The resin composition includes a thermosetting base resin, a thermoplastic resin powder, a curing agent, and an inorganic filler, a cured resin product formed by curing the resin composition, and an electrical member.

Resin composition and electronic component

Provided is a method of manufacturing a semiconductor device which includes a semiconductor chip, an insulating board mounted with the semiconductor chip and having a wiring pattern, and a leadframe connected to the wiring pattern, the semiconductor chip, the wiring pattern and the leadframe being partially sealed with a sealing resin, wherein: an epoxy resin composition formed by adding 0.3 to 0.7 mass % of epoxysilane as a silane coupling agent to an epoxy resin is used as the sealing resin; and a copper member made of copper or a copper alloy and having an oxide film formed in the surface with a film thickness in a color indicated by an L* value in the range of 48 to 51, an a* value in the range of 40 to 49 and a b* value in the range of 24 to 40 is used as the leadframe and the wiring pattern.

Manufacturing and evaluation method of a semiconductor device

A magnetic recording medium and related method of manufacturing a magnetic recording medium that has a protective layer for the magnetic recording medium and that exhibits excellent corrosion resistance in the protective layer. The magnetic recording medium includes on a nonmagnetic substrate a magnetic layer and a protective layer formed on the magnetic layer. The protective layer is formed of a lower layer in contact with the magnetic layer and an upper layer formed on the lower layer. The material used in the lower layer is a metal having a standard electrode potential of &#x2212;0.8 to 0.3 V.

Magnetic recording medium and method of manufacturing same

A color conversion film that absorbs light from an organic electroluminescent part emitting blue-green light and converts the light to visible light at a longer wavelength. The color conversion film includes two different dyes. A first dye is a polymer dye with an average molecular weight of 1000 to 1,000,000 that absorbs light incident on the color conversion film and transfers the energy of the light to a second dye. The second dye is a dye that receives the energy from the first dye and emits light. With a multicolor-emitting, organic electroluminescent device including the color conversion film, it is possible to achieve excellent conversion efficiency without increasing the thickness of the color conversion film as in a conventional device using a binder resin. Such an organic electroluminescent device may include as well a pair of electrodes at least one of which is a transparent electrode, and an organic electroluminescent layer sandwiched between the electrodes.

Color conversion film and multicolor-emitting, organic electroluminescent device comprising the color conversion film

A color conversion film is disclosed that absorbs light from an organic electroluminescent part emitting blue-green light and converts the light to visible light at a longer wavelength. The color conversion film includes two different dyes. A first dye is a polymer dye with an average molecular weight of 1000 to 1,000,000 that absorbs light incident on the color conversion film and transfers the energy of the light to a second dye. The second dye is a dye that receives the energy from the first dye and emits light. With a multicolor-emitting, organic electroluminescent device including the color conversion film, it is possible to achieve excellent conversion efficiency without increasing the thickness of the color conversion film as in a conventional device using a binder resin.

A method for manufacturing a color filter includes obtaining a color filter, treating the color filter with oxygen plasma, treating the color filter with fluorine plasma and forming one or more color conversion layers. The color filter is obtained by forming on a transparent substrate, multiple color filter layers having respective colors, and banks. The color filter layers are composed of polysiloxane and pigments. The banks are composed of resin and formed at boundaries between color filter layers of different colors. The color conversion layers have respective colors and are formed on the color filter layers by an inkjet method.

Color conversion filter manufacturing method

An organic EL device is disclosed which has a buffer structure that mitigates sputtering damage inflicted in the process of forming a transparent top electrode, that exhibits sufficient electrical conductivity and light transmissivity, and that exhibits high electron injection efficiency. An organic EL device according to the invention includes, sequentially disposed on a substrate, a bottom electrode, an organic EL layer including at least an organic light emissive layer, a buffer structure, and a transparent top electrode through which light is emitted. The buffer structure is a multilayer structure having two or more first type buffer layers containing a transparent material and two or more second type buffer layers containing a metal or an alloy, with each of the second type buffer layers being disposed on one of the first type buffer layers. A method for manufacturing such an organic EL device also is disclosed.

Organic electroluminescent device and method for manufacturing same

The organic thin-film light-emitting device includes a substrate, a plurality of first electrodes arranged parallel on the substrate, an electroluminescent layer made of an organic material and formed on the first electrodes, a plurality of second electrodes formed on the electroluminescent layer, and an electrically insulating barrier wall. The barrier wall includes barrier wall lines disposed at gaps in an electrode pattern of the second electrodes, and barrier wall end lines connected to the barrier wall lines so that the barrier wall lines do not have ant free ends. Thus, peeling-off of the barrier wall lines as a shadow mask at their end is prevented.

Growing community of inventors

Matsumoto, Japan

Yuko Nakamata