Panasonic Intellectual Property Management Co., Ltd.

Yuko Kishimoto

Masaya Hirade

Hiroaki Iijima

Manabu Nakata

Katsuyuki Shizu

Hironori Kaji

Katsuaki Suzuki

Shinji Tanaka

An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

Imaging device

A composition contains a naphthalocyanine derivative represented by the following formula: where Rto Rare independently an alkyl group and Rto Rare independently an aryl group, and at least one hydrogen atom in at least one selected from the group consisting of R, R, R, and Ris substituted by an electron-withdrawing group.

Composition, photoelectric conversion element, and imaging device

A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Camera system

A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, Rto Reach independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of Rto Rbond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Aris selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Arwith N in Formula (2).

Photoelectric conversion material containing organic semiconductor material, and photoelectric conversion element

A composition contains a compound represented by the following formula: where M represents either of Si and Sn, Rto Reach independently represent an alkyl group containing three or less carbon atoms, and Rto Reach independently represent an alkyl group.

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Osaka, Japan

Yuko Kishimoto