Kabushiki Kaisha Toshiba

Ulvac, Inc.

Yuko Kato

Hidefumi Yasuda

Kazuyoshi Furukawa

Toshiyuki Terada

Yasuharu Sugawara

Takahiro Yajima

Taisuke Sato

Eiji Muramoto

Toshitake Kitagawa

Kazufumi Shiozawa

Tomoko Morioka

Tadashi Oka

Yousuke Matsumoto

Shouta Kanai

Yasuaki Murata

Kazuhiro Ikezawa

To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. A device structureaccording to an embodiment of the present invention includes a substrate (base), a device layer, a first inorganic material layer (convex portion), and a first resin material. The substratehas a first surfaceand a second surfaceopposite to the first surface. The device layeris arranged on at least the first surfaceout of the first and second surfacesand. The first inorganic material layeris formed on the first surface. The first resin materialis unevenly arranged around the first inorganic material layer

Device structure and method of producing the same

According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.

Semiconductor light emitting element and method for manufacturing same

According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device includes: a semiconductor laminated body including a light emitting layer and having a light extraction surface for light emitted from the light emitting layer, a conductive film provided on the light extraction surface of the semiconductor laminated body and being translucent to the light emitted from the light emitting layer and an electrode provided above the conductive film. The conductive film has at least two levels of thickness.

Semiconductor light emitting device and apparatus having a translucent conductive film

A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

Semiconductor light emitting device and method of manufacturing same and semiconductor light emitting apparatus

A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the plurality of contact sections being opaque with respect to emission wavelengths of the plurality of light emitting sections.

A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.

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Kanagawa-ken, Japan

Yuko Kato