Oki Electric Industry Co., Ltd.

Yuko Itoh

Tadashi Saito

Seiichi Takahashi

Shinichi Hoshi

Kazuyuki Inokuchi

Nobusuke Yamamoto

Nobumasa Higemoto

A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.

Semiconductor device and process of fabricating same

A semiconductor device includes a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure. The Schottky electrode has a lower portion that penetrates through the cap layer and reaches the Schottky layer, and has an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.

Semiconductor device with Schottky layer

Growing community of inventors

Tokyo, Japan

Yuko Itoh