Sony Corporation

Yuko Inoue

Hisao Hayashi

Masafumi Kunii

Hisashi Kadota

Takenobu Urazono

Yukio Kinoshita

Shinji Nakamura

Shinj Nakamura

An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate ( ). Pixel electrodes ( ) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode ( ), an insulating film ( ) formed on the gate electrode ( ), a polycrystalline semiconductor layer ( ) formed on the insulating layer ( ), and a high concentration impurity layer constituting a source ( ) and a drain ( ) formed on the polycrystalline semiconductor layer ( ). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer ( ) is interposed between the polycrystalline semiconductor layer ( ) and the high concentration impurity layer ( ).

Thin film semiconductor device for display and method of producing same

An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (3) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurity layer (7).

Thin film semiconductor device for display

A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

Color display device

Growing community of inventors

Kanagawa, Japan

Yuko Inoue