Murata Manufacturing Co., Ltd.

Yukiya Yamaguchi

Morio Takeuchi

Takanori Uejima

Yoichi Sawada

Motoji Tsuda

Yuji Takematsu

Takayuki Shinozaki

Shigeru Tsuchida

Shun Harada

Satoshi Arayashiki

Satoshi Goto

Atsushi Horita

Dai Nakagawa

Yusuke Naniwa

Shunji Yoshimi

Yutaka Sasaki

Syunsuke Kido

Masayuki Aoike

Mitsunori Samata

Jin Yokoyama

Hiroyuki Kani

Sho Matsumoto

Shogo Yanase

Yuto Aoki

Tadashi Nomura

Masakazu Tani

Masanori Kato

Hideki Muto

Takashi Yamada

Hiroshi Nishikawa

Toru Komatsu

Kiyoshi Aikawa

Teruaki Oshita

Yuuki Fukuda

Hidetaka Takahashi

Masanari Miura

Takanori Ito

Rui Tanaka

Tomomi Yasuda

Hiroki Fujiwara

Tomoaki Sato

Naru Morito

Hiroki Shonai

Takuma Kuroyanagi

Mayuka Ono

Yoshito Matsumura

A high-frequency module includes: a module substrate that has major surfaces that face each other; a resin member for covering at least a part of the major surface; a shield electrode layer for covering at least a part of a surface of the resin member; a plurality of post electrodes placed on the major surface; a power amplification component placed on the major surface; and a first metal electrode (for example, a shield electrode layer). The power amplification component includes: a base material that has major surfaces that face each other, the major surface being located between the major surface and the major surface; and an amplification transistor formed on the base material. The first metal electrode is placed on the major surface and is in contact with the shield electrode layer.

High-frequency module and communication device

An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit, a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a high thermal conductive member that has at least a part formed of a high thermal conductive material having a thermal conductivity higher than the first semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the high thermal conductive member overlaps at least a part of the first base and at least a part of the second base in plan view. The high thermal conductive member is in contact with the first base and the second base.

Integrated circuit and radio-frequency module

An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit (for example, a control circuit or a switching circuit), a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a low thermal conductive member that has at least a part formed of a low thermal conductive material having a thermal conductivity lower than the second semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the first base overlaps at least a part of the second base in plan view.

A radio frequency module is reduced in height. A radio frequency module includes a mounting substrate, a filter, and a conductive member. The mounting substrate has a first main surface and a second main surface opposite to each other. The filter is mounted on the first main surface of the mounting substrate. The conductive member covers at least part of a main surface of the filter on a side opposite to the mounting substrate. The first main surface of the mounting substrate has a recess. The main surface of the filter is in contact with the conductive member. At least part of the filter is positioned inside the recess.

Radio frequency module and communication device

A hybrid filter includes a module substrate having a major surface and a major surface that are opposite to each other, acoustic wave resonator elements disposed at the module substrate, inductors disposed at the module substrate, and a capacitor disposed at the module substrate. The pass band of the hybrid filter is wider than the resonance band width of the acoustic wave resonator elements. One of the acoustic wave resonator elements, the inductors, and the capacitor is a first circuit element, and the first circuit element is disposed at the major surface. Another of the acoustic wave resonator elements, the inductors, and the capacitor is a second circuit element, and the second circuit element is disposed at the major surface.

Hybrid filter, multiplexer, radio-frequency module, and communication device

In a radio-frequency module, a conductive layer covers a major surface opposite to the mounting board side of a resin layer and a major surface opposite to the mounting board side of an electronic component. The electronic component includes an electronic component body and a plurality of outer electrodes. The electronic component body includes an electrical insulating portion and a conductive portion provided inside the electrical insulating portion, forming at least a portion of a circuit element of the electronic component. The electronic component body has a third major surface and a fourth major surface opposite to each other, and an outer side surface. The third major surface forms the major surface of the electronic component, and the third major surface is in contact with the conductive layer. The plurality of outer electrodes are provided on the fourth major surface, but are not extended over the third major surface.

Radio-frequency module and communication device

A radio-frequency module includes a module substrate having main surfaces facing each other, a transmission filter that has a bottom surface and a top surface facing each other and passes a radio-frequency signal, and an external connection terminal disposed on the main surface. The bottom surface faces the main surface and is disposed closer to the main surface than the top surface. The radio-frequency module further includes a metal electrode joined to the top surface.

Improvement in heat dissipation capability is intended. A radio-frequency module includes a mounting substrate, a first transmission filter, a second transmission filter, a resin layer, and a shield layer. The second transmission filter is higher in power class than the first transmission filter. The resin layer covers at least part of an outer peripheral surface of the first transmission filter and covers at least part of an outer peripheral surface of the second transmission filter. The shield layer overlaps at least part of the second transmission filter in plan view in a thickness direction of the mounting substrate. At least part of a major surface of the second transmission filter on an opposite side to the mounting substrate side is in contact with the shield layer.

A radio-frequency module includes a first base, which has at least a part formed of a first semiconductor material and which includes a low-noise amplifier circuit, a second base, which has at least a part formed of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit, and a module substrate, which has a principal surface on which the first base and the second base are disposed. The first base is joined to the principal surface with electrodes interposed in between. The second base is disposed between the module substrate and the first base in cross-sectional view, and is joined to the principal surface with an electrode interposed in between. At least a part of the first base overlaps at least a part of the second base in plan view.

A module includes a substrate including a first surface, a first component mounted on first surface, and a first sealing resin sealing first component. First sealing resin contains a filler. An upper surface of first sealing resin includes a first region and a second region. A ratio of an area where the filler is exposed from first sealing resin in the second region is smaller than a ratio of an area where the filler is exposed from first sealing resin in the first region, at least the first region and side surfaces of the first sealing resin are covered with a shield film, and the second region is not covered with shield film.

Module and method for manufacturing same

A radio frequency module includes a module substrate, a power amplifier that amplifies a transmission signal in a middle band group, a low noise amplifier that amplifies a reception signal in the middle band group, and a conductive component that transmits a radio frequency signal in a high band group, wherein the power amplifier is mounted on a main surface of the module substrate, the low noise amplifier is mounted on a main surface of the module substrate, and the conductive component is mounted between the power amplifier and the low noise amplifier on the main surface when the module substrate is viewed in plan.

Radio frequency module and communication apparatus

A radio-frequency module includes a first base made of a first semiconductor material; a second base that is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit; a third base including a transmission filter circuit; and a module substrate having a main surface on which the first base, the second base, and the third base are arranged. The first base is joined to the main surface via an electrode. The second base is arranged between the module substrate and the first base in a sectional view and is joined to the main surface via an electrode. At least part of the first base is overlapped with at least part of the second base and at least part of the third base in a plan view.

Radio-frequency module and communication apparatus

The radio frequency module includes a module substrate, an electronic component disposed on a main surface, a resin member covering at least part of the main surface and at least part of a side surface of the electronic component, and a metal shield layer that is formed on a surface of the resin member and is set to a ground potential. The electronic component has a top surface in contact with the metal shield layer, a bottom surface facing the main surface, a circuit portion formed at a position closer to the bottom surface than to the top surface, and a metal layer formed between the metal shield layer and the circuit portion. The metal layer is a barrier metal.

A radio-frequency module includes a mounting substrate including a ground electrode layer formed by a planar wiring pattern; multiple ground terminals, which are multiple external connection terminals that are arranged on a first main surface of the mounting substrate and that are set to ground potential; and a first radio-frequency component (for example, a reception filter and/or a low noise amplifier) mounted on the first main surface. The multiple ground terminals are arranged at an outer periphery side of the first main surface with respect to the first radio-frequency component and are connected to the ground electrode layer. In a plan view of the mounting substrate, at least part of the first radio-frequency component is overlapped with the ground electrode layer.

A radio-frequency module includes a first power amplifier, a second power amplifier, a switch, a plurality of first filters, and a second filter. The first power amplifier amplifies a transmission signal of a first frequency band and outputs the amplified transmission signal. The second power amplifier amplifies a transmission signal of a second frequency band and outputs the amplified transmission signal. The pass bands of the plurality of first filters are contained within the first frequency band. The pass band of the second filter is contained within the second frequency band. The second power amplifier has a greater output power level than the first power amplifier. The first output terminal of the first power amplifier is switchably connectable to the plurality of first filters via the switch. The second output terminal of the second power amplifier is connected to the second filter without the switch interposed therebetween.

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Nagaokakyo, Japan

Yukiya Yamaguchi