Nec Corporation

Yukiya Kawakami

Akihito Tanabe

Nobuhiko Mutoh

Shigeru Tohyama

A charge storing layer of a photodiode having an N-type conductivity includes an N -type additional implant area in the vicinity of a junction between the charge storing layer and an isolation region. The additional implant area provides an increase of stored charge and suppression of increase of the pulse voltage for a substrate shutter, and can be made to have a smaller width within a current design rule.

Solid state imaging device and method for manufacturing the same

Minority carriers generated by photoelectric conversion in an isolation layer and a semiconductor region with the same conduction type as that of the isolation layer are provided with an effective diffusion length owing to a trench formed in the isolation layer and with no path, which could be a straight escape route for the minority carriers, and false signals, therefore, scarcely enters to a neighboring cell, so that smear and color interference can be suppressed.

Solid state imaging device

A charge coupled device including: a substrate; a semiconductor layer overlying the substrate; a semiconductor layer overlying the semiconductor layer; a charge storage layer existing on the semiconductor layer and sandwiched by a pair of isolation regions; an impurity region between the semiconductor layer and the charge storage layer; a dielectric film overlying the charge storage layer and the isolation regions, and an electrode formed by a conductive film. In accordance with the present invention, the increase of the amount of the charge storage and of the higher photosensitivity can be simultaneously satisfied. The fluctuation of the characteristics of the charge coupled device in accordance with the present invention is smaller than that of the conventional charge coupled device. Further, the method of the fabrication is less complicated than that for the conventional charge coupled device.

Charge coupled device with separate isolation region

A charge coupled device has an n-type charge accumulating layer equal to or less than 5 micron in width, and the unit cells suffer from reduction of signal charge accumulated therein and an increased pulse height of a pulse signal for a substrate shutter, wherein at least one p-type local impurity region is formed in such a manner as to form a p-n junction together with the n-type charge accumulating layer and the n-type semiconductor substrate, thereby increasing the amount of signal charge accumulated in each unit cell without sacrifice of the pulse height of the pulse signal for the substrate shutter.

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Tokyo, Japan

Yukiya Kawakami