Panasonic Corporation

Yukitoshi Ota

Hiroshige Hirano

Taichi Nishio

Yutaka Itou

Toshiyuki Fukuda

Kiyomi Hagihara

Isamu Aokura

Tsuyoshi Hamatani

Fumito Itou

Yutaka Itoh

Koji Koike

Keiji Miki

Provided is an electronic component package that does not lower reliability while enabling miniaturization and high performance of the electronic component package. The electronic component package includes a main substrate, a first electronic component provided on a main surface of the main substrate, a frame body disposed so as to face the main surface of the main substrate, and a first connection terminal and a second connection terminal disposed on the main surface of the main substrate along a first side of the frame body. The second connection terminal is disposed on the first side of the frame body at a position facing a vicinity of a midpoint of a side of the first electronic component, and the second connection terminal has an area larger than an area of the first connection terminal.

Electronic component package

A semiconductor device includes: a first insulating film formed on a substrate; a pad embedded in the first insulating film; and a second insulating film that is formed on the first insulating film and has an opening exposing at least part of the pad. The pad includes a plurality of pad interconnects, and an interconnect link is provided to electrically connect adjacent interconnects among the plurality of pad interconnects. The width of the pad interconnects is smaller than the height of the pad interconnects and larger than the width of the interconnect link.

Semiconductor device having a pad

A semiconductor device includes a first interconnect layer and a second interconnect layer provided above or under the first interconnect layer. The first interconnect layer includes a plurality of first interconnect blocks, and in each of the first interconnect blocks, a first interconnect has a first potential, and extends in at least two or more directions, and a second interconnect has a second potential, and extends in at least two or more directions. The second interconnect layer includes a third interconnect which electrically connects the first interconnect of one of a pair of adjacent first interconnect blocks and the first interconnect of the other of the pair of adjacent first interconnect blocks, and a fourth interconnect which electrically connects the second interconnect of one of the pair of adjacent first interconnect blocks and the second interconnect of the other of the pair of adjacent first interconnect blocks.

Semiconductor device

A semiconductor device includes an electrode pad formed above a semiconductor substrate, and being a connecting portion for an external electrical connection; a multilayer body including a plurality of first interconnect layers formed in a plurality of insulating films stacked between the semiconductor substrate and the connecting portion and including an upper interconnect connected to the connecting portion, and a via configured to connect the first interconnect layers; a ring body formed in the plurality of insulating films to surround the multilayer body without interposing space, and including a plurality of second interconnect layers and at least one line via linearly connecting the second interconnect layers; and a lead line electrically connecting the connecting portion to an internal circuit. The multilayer body is connected to the ring body by at least one of the plurality of first interconnect layers. The lead line is connected to the ring body.

A semiconductor device includes a plurality of through vias extending through a substrate. The plurality of through vias are arranged dividedly in three or more via groups. Each of the via groups includes three or more of the through vias that are arranged in two dimensions.

A semiconductor device includes: a semiconductor substrate having a first surface as a surface on which an element is formed, and a second surface opposite to the first surface; a through hole formed so as to extend through the semiconductor substrate from the first surface to the second surface; an insulating film formed on an inner wall of the through hole; and a conductive portion formed in a space surrounded by the insulating film in the through hole. The insulating film continuously extends on the inner wall of the through hole and on the second surface.

Semiconductor device and manufacturing method thereof

A semiconductor device includes an insulating film formed on a semiconductor substrate, a contact wiring formed in the insulating film, a protective film formed on the contact wiring and the insulating film, an opening portion formed in the protective film, the contact wiring being exposed through the opening portion, and an electrode pad formed in the opening portion, the electrode pad being electrically connected to the contact wiring. A region where the contact wiring is not provided is present below the opening portion.

A seal ring is continuously formed along a boundary between a semiconductor element region and a scribe grid region, auxiliary parts are intermittently arranged along the seal ring, and the seal ring is constituted by a metal layer.

A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) () having solder bumps () (projecting electrodes) formed on electrode pads, and a first wiring board () having connection terminals () to which the respective solder bumps () of the IC chips () are connected, external connection terminals () for connection to an external apparatus, and conductor wires () provided in respective groove portions formed in a board surface and connected to the respective connection terminals (). In spite of the reduced pitch of the conductor wires (), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.

Growing community of inventors

Osaka, Japan

Yukitoshi Ota