Canon Anelva Corporation

Yukito Nakagawa

Yoshimitsu Kodaira

Motozo Kurita

Takashi Nakagawa

Masayoshi Ikeda

Yasushi Yasumatsu

Yasumi Sago

Yasushi Kamiya

Akihiro Egami

Masashi Tsujiyama

Kazuyuki Iori

An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the treatment chamber; a substrate holder; a control unit to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and an electromagnetic coil provided outside of the plasma generation chamber in a ceiling portion opposite to the grid of the plasma generation chamber. The electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, and the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result.

Method for manufacturing semiconductor device, ion beam etching device, and control device

A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step. By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrateis corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamberis caused to be different between a position facing a central portion in the plane of the substrateand a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrateand the etching rate in the outer peripheral portion in the substrate planeare caused to be different.

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.

Grid, method of manufacturing the same, and ion beam processing apparatus

In order to easily exchange a depleted dielectric member in a substrate processing apparatus, a faraday shield provided opposite to an antenna across a component member made of a dielectric, a first dielectric member provided opposite to the antenna across the component member and the faraday shield, and a second dielectric member provided opposite to the antenna across the component member, the faraday shield, and the first dielectric member are provided, and the second dielectric member is placed on a protrusion part formed on a vacuum container in the substrate processing apparatus.

Substrate processing apparatus, etching method of metal film, and manufacturing method of magnetoresistive effect element

This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film. The noble metal atoms are selectively removed from the re-deposited film by applying an ion beam, formed using a plasma of a Kr gas or a Xe gas, to the re-deposited film formed on the side wall of the magnetoresistive effect element after the element isolation.

Process for producing magnetoresistive effect element

In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.

Method of fabricating fin FET and method of fabricating device

The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an embodiment of the present invention, the inside of a vacuum vessel () is divided by a grid () having communication holes into a plasma generation chamber () and a plasma processing chamber (). On the upper wall () of the plasma generation chamber (), magnetic coils () are arranged such that magnetic field lines within the vacuum vessel () point from the center of the vacuum vessel () to a side wall (), and, outside the side wall () of the plasma generation chamber (), ring-shaped permanent magnets () are arranged such that a polarity pointing to the inside of the vacuum vessel () is a north pole and a polarity pointing to the outside of the vacuum vessel () is a south pole.

Plasma processing device, plasma processing method and method of manufacturing element including substrate to be processed

This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced.

Growing community of inventors

Kawasaki, Japan

Yukito Nakagawa