Canon Kabushiki Kaisha

Yukito Aota

Masahiro Kanai

Koichi Matsuda

Atsushi Koike

Ryuji Ishii

Koichi Ishige

Hiroshi Sugai

Takashi Tsuboi

Tomokazu Sushihara

Koichiro Moriyama

Hirokazu Otoshi

Nozomu Izumi

Kumiko Kaneko

An organic light-emitting element includes, from a first surface of a substrate in this order, the substrate, a lower electrode, an organic compound layer, an upper electrode, a first protective layer containing inorganic material, a second protective layer whose density is higher than the density of the first protective layer, and a third protective layer whose density is higher than the density of the first protective layer, in which the third protective layer is disposed on a second surface of the substrate opposite to the first surface of the substrate.

Organic light-emitting element, method for producing organic light-emitting element, organic light-emitting device, method for producing organic light-emitting device, lighting device, moving object, image pickup device, and electronic apparatus

A method for producing an organic light-emitting device is provided for an organic light-emitting device having a substrate provided with external connection terminals, organic light-emitting elements provided on the substrate, and a protective film that covers the organic light-emitting elements. The method includes, sequentially, providing a protective film removal layer on the external connection terminals, forming the protective film on the substrate, dividing the substrate on which the protective film has been formed, and cleaning the substrate with water, an aqueous solution, or a solvent. The protective film removal layer and the protective film are removed from the external connection terminals as a result of cleaning the substrate.

Method for producing organic light-emitting device

An organic EL device includes a substrate; a layered structure including a first electrode, an organic layer, and a second electrode disposed on the substrate in this order; and laminated protective layers surrounding at least the layered structure. The protective layers are composed of silicon, nitrogen, hydrogen, and fluorine. The fluorine content in the outermost protective layer is in the range of 0.01 to 1.0 atomic percent.

Organic electroluminescent device with SiN layer containing hydrogen and fluorine

Provided is an organic EL device including a substrate, a lower electrode, an organic compound layer containing one of an alkali metal and an alkali metal compound, an upper electrode formed of an oxide film, and passivation layers for covering the lower electrode, the organic compound layer, and the upper electrode, the lower electrode, the organic compound layer, the upper electrode, and the passivation layers being stacked in the stated order on the substrate, in which the passivation layers include a first passivation layer formed on the upper electrode, which contains silicon as a main component, and which is free of hydrogen and a second passivation layer formed on the first passivation layer which contains silicon as a main component and hydrogen.

Organic el device and method of producing the device

Provided is an organic light-emitting apparatus in which a crack or the like produced when removing a passivation layer on an external connection terminal is prevented from developing with the elapse of time and the moisture resistance of a light-emitting area is not impaired. The organic light-emitting apparatus includes a substrate; an organic planarization layer for planarizing unevenness of the substrate; an organic light-emitting device including a lower electrode, an organic compound layer, and an upper electrode; and a passivation layer for covering the organic light-emitting device, in which the organic planarization layer has formed therein a recessed or protruding discontinuous portion for dividing a region including a light-emitting area and a region including an external connection terminal, and the discontinuous portion is covered with the passivation layer.

Organic light-emitting apparatus and method of producing the same

Organic electroluminescent device

In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.

Plasma processing method and apparatus

A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The plasma-processing apparatus has an impedance-matching equipment comprising a capacitive element and an inductive element, which are mutually connected in series. The apparatus is arranged so that the capacitive element and the inductive element of the impedance-matching equipment are symmetrical with respect to the center of the high frequency power application electrode.

Plasma-processing apparatus

In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation.

Method and apparatus for deposited film

A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.

Method of forming silicon nitride deposited film

A plasma processing method for processing a substrate includes a discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power used in processing into the processing chamber to generate a plasma. An adjustment step of reducing the first high-frequency power to be close to the value used in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value is part of the method. The plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing is also part of the method. Plasma discharge can be automatically, smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in the case of disappearance of discharge, plasma discharge can be quickly restarted.

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Yokohama, Japan

Yukito Aota