Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Yukitaka Hori

Katsumi Satoh

Norihisa Asano

A semiconductor device includes a semiconductor substrate, a first anode electrode, and a second anode electrode. The first anode electrode is disposed on the semiconductor substrate. The second anode electrode is spaced from the first anode electrode on the semiconductor substrate around the first anode electrode. At least any of a first end of the first anode electrode on a second anode electrode side and a second end of the second anode electrode on a first anode electrode side is covered with a SInSiN film.

Semiconductor device

There is provided a semiconductor device manufacturing method which prevents cracking of an overcoat during polishing process, and a semiconductor wafer and a semiconductor device which have an overcoat free from cracking. A plurality of divided overcoatsare formed on each chipin a chip regionand on each unavailable chip pattern in an unavailable region in the periphery of the chipson the surface of a semiconductor wafer, and the semiconductor waferis mounted upside down on a table with an intervening film so that the back surface of the semiconductor waferis polished.

Semiconductor device manufacturing method, semiconductor wafer, and semiconductor device

A semiconductor chip and connection ends of corresponding external electrode terminals are encapsulated with a glass based sealing material, and the semiconductor chip includes a wide gap semiconductor element, and the electrodes of the semiconductor chip are connected to the end portions of the external electrode terminals by a silver based brazing member and/or pressure contact.

Growing community of inventors

Fukuoka, Japan

Yukitaka Hori