Murata Manufacturing Co., Ltd.

Yukio Yoshino

Masaki Takeuchi

Hajime Yamada

Masato Kobayashi

Tadashi Nomura

Hideki Kawamura

Daisuke Nakamura

Yoshihiko Goto

Ken-ichi Uesaka

Atsushi Sakurai

Yoshimitsu Ushimi

Yoshihiko Gotoh

Hidefumi Nakanishi

Hiroyuki Fujino

Takashi Hayashi

Yuzo Katayama

Akio Ikeda

Kenichi Kotani

Ryuichi Kubo

Osamu Nakagawara

Seiichi Arai

Toru Kasanami

Mikio Nakajima

Norimitsu Tsukai

A manufacturing method for an electronic component includes a process of forming a lower electrode and a dummy electrode, which are electrically connected to each other, on a substrate, and a process of forming a piezoelectric thin film on the dummy electrode and the lower electrode while a predetermined bias potential is applied to the lower electrode via the dummy electrode. In this method, the piezoelectric thin film is formed on the lower electrode by stabilizing the potential of the lower electrode, thereby decreasing the surface roughness of the piezoelectric thin film. It is thus possible to manufacture an electronic component that exhibits excellent piezoelectric characteristics, in which the electromechanical coupling coefficient and the quality factor of a resonator are increased.

Method of manufacturing an electronic component

A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.

Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter

A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiOand AlO, respectively, AlOhaving oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

Method for manufacturing a piezoelectric resonator

A piezoelectric resonator includes a substrate and a vibrator. The vibrator includes a thin-film portion having at least one piezoelectric thin-film layer disposed on the substrate and at least one pair of upper and lower electrodes disposed on the substrate. The vibrator has a structure in which the thin-film portion is sandwiched from the upper and lower surfaces thereof by the upper and lower electrodes, which oppose each other in the depth direction, and the overlapping portion of the vibrator defined by the opposing upper and lower electrodes has a tetragonal shape, when viewed in the depth direction, other than a rectangle and a square, the tetragonal shape having substantially parallel sides having a longitudinal length equal to or smaller than about 10 times the oscillatory wavelength and also having at least one portion in which the distance between opposing electrode edges varies.

Piezoelectric resonator, and piezoelectric filter, duplexer, and communication apparatus, all including same

Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator

A piezoelectric resonator includes a substrate, a vibration unit disposed on the substrate and having a structure in which at least one pair of an upper electrode and a lower electrode opposed to each other, the upper and lower electrodes sandwiching the upper and lower surfaces of an internal thin-film portion including at least one layer of a piezoelectric thin-film, and an external thin-film portion provided under the lower electrode and including at least one layer of a piezoelectric thin-film or a dielectric thin-film, the vibration unit being vibrated in an n-th harmonic (n is an integer of 2 or more), the upper electrode and the lower electrode being provided substantially in the positions of the loops of the n-th harmonic.

Piezoelectric resonator, filter, and electronic communication device

A highly compact piezoelectric resonator having excellent resonant characteristics and very small resonant resistance includes an upper electrode disposed on one of two main surfaces of a piezoelectric film and a lower electrode disposed on the other main surface of the piezoelectric film. The upper electrode includes a first external-signal extracting electrode, a first leading electrode, and three first vibrating electrodes. The lower electrode includes a second external-signal extracting electrode, a second leading electrode, and three second vibrating electrodes. The three first vibrating electrodes are arranged substantially perpendicularly to the three second vibrating electrodes via the piezoelectric film. Vibrating sections are located at positions where the first vibrating electrodes are arranged substantially perpendicularly to the second vibrating electrodes.

Piezoelectric resonator and electronic device incorporating the same

The heat conductance of the heat transfer route through which heat flows into a heat sink from the central region and its neighborhood of an absorbent via the edge region of the absorbent is made to be smaller, by making the absorbent have such a form that the film thickness of the edge region of the pattern of the infrared absorbent formed on the surface of a temperature sensing part is smaller than that of the central region of the pattern. Efficient temperature rise of a temperature sensing part is realized.

Heat absorbent for an infrared sensor and method for forming same

It is made possible to adjust the output of a thermopile-type thermoelectric sensor in such a way that a thermoelectric pattern for sensitivity adjustment is connected in series to a plurality of thermoelectric patterns constituting a thermopile short-circuited patterns for short-circuiting cold junctions of the thermoelectric pattern for sensitivity adjustment are formed, and the short-circuited patterns are selectively cut off.

Thermopile-type thermoelectric sensor

By using a dual ion-beam sputtering apparatus, an aluminum thin-film is formed on a glass substrate made of an amorphous material. While radiating an ion beam for assisting the film formation from an ion source onto the glass substrate, the aluminum thin-film is formed by depositing the sputtering ions which are generated by radiating an ion beam onto an aluminum target.

Metallic thin film and method of manufacturing the same, and surface acoustic wave device using the method thereof

An electronic part having an air-bridge interconnection has a flat air-bridge interconnection body, no interconnection loss, high Q and low power consumption. Also disclosed is a method of manufacturing such electronic parts. The flat air-bridge interconnection body is obtained by conducting two-stage selective plating including selective plating for forming posts on post base electrodes and selective plating for forming the air-bridge interconnection body.

Method of manufacturing an electronic part having an air-bridge

Metallic thin flim and method of manufacturing the same, and surface

An inexpensive and reliable thin-film multilayered electrode which is formable on a dielectric substrate such as a ceramic substrate. A thin-film multilayered electrode has thin-film conductors and thin-film dielectrics formed by alternately layering on a dielectric substrate with a predetermined dielectric constant. The dielectric constant for each of the thin-film dielectrics is selected such that the electromagnetic field created in the dielectric substrate and the electromagnetic field created in each of the thin-film dielectrics are substantially in phase with each other when the thin-film multilayered electrode is used at a predetermined frequency, and the film thickness of each of the thin-film dielectrics falls between 0.2 .mu.m and 2 .mu.m; and the film thickness of each of the thin-film conductors, other than a thin-film conductor formed most distant from the dielectric substrate, is thinner than the skin depth at the predetermined frequency.

Thin-film multilayered electrode, high-frequency resonator, and

A method of fabricating a through-holed wiring board comprising a step of forming a through hole in a ceramic wiring board with a laser beam, and a step of removing an alteration layer, defined on an inner wall portion of the through hole by solidification after thermal melting, by sandblasting.

Growing community of inventors

Otsu, Japan

Yukio Yoshino