Mitsubishi Denki Kabushiki Kaisha

Fuji Photo Film Company, Limited

Mitsubishi Electric Corporation

Sony Corporation

Yukio Yasuda

Nobuhito Masuda

Atsunobu Kawamoto

Masaki Okazaki

Shigeru Nagatomo

Hajime Makiuchi

Masahiro Yamamoto

Wataru Fukui

Yasuhiro Takahashi

Yutaka Ohashi

Yuji Mihara

Hajime Kato

Kazuaki Hiyama

Mikio Ishihara

Yusuke Naruse

Nobuo Hiratsuka

Taishi Sasaki

Futoshi Aida

Shinsuke Godo

Kazuyoshi Kobayashi

Kenji Miura

Tsuyoshi Takayama

Shinsuke Goudo

Ikuo Chatani

Tsunehisa Obana

A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.

Semiconductor device

A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than a predetermined voltage.

Power semiconductor device for igniter

A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from the switching element and electrically connected thereto. The switching element turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit includes a control circuit which controls ON/OFF the switching element and a back side voltage detection element which detects a voltage of the back side of the integrated circuit.

Power semiconductor device

An internal combustion engine ignition device is provided in which an ECU () includes a pulse generation circuit () that outputs pulse signals (Igtand Igt) and an ion-signal detection/control circuit (), and a coil driver () includes a pulse detection circuit () that recognizes a signal received from the pulse generation circuit () and an ion-current detection circuit (); when the pulse signals are not outputted, an ion current is detected and a signal is outputted at the same line as a coil-driver input signal line.

Internal combustion engine ignition device

In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.

A loudspeaker protective unit for protecting a loudspeaker device against an excessive input current includes a lamp connected in series with the loudspeaker unit. The lamp is housed in a casing exhibiting light-sealing properties formed of an electrically conductive material, and is sealed with a sealant exhibiting a predetermined electrical conductivity. The spacing between lead lines of the lamp housed in the casing is of a preset value. An inert gas is sealed within a main lamp body unit and a preset voltage is applied to the main lamp body unit. When the voltage is applied across the lead lines, an electrical discharge is produced to interrupt the current flowing through the filament so as to prohibit a temperature rise in the lamp.

Speaker-use protection element and speaker device

A semiconductor device which IGBT (Z) and a control circuit (B) for driving the IGBT (Z) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P) for inputting a drive signal of the IGBT (Z), a Schottky barrier diode (D) having an anode connected to the input terminal (P) and a cathode connected to an input terminal (B) of the control circuit (B), and a p-channel MOSFET (T) for shorting both ends of the Schottky barrier diode (D) when the voltage of the drive signal input to the input terminal (P) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.

IGBT with a Schottky barrier diode

Latch-up of each of parasitic thyristors (T -T ), which occurs when a circuit element (B ) is formed on a semiconductor substrate in which an IGBT (Z ) has been formed, is prevented by a circuit for preventing the latch-up using Schottky barrier diodes (D , D ) formed on the semiconductor substrate. Each of the Schottky barrier diodes (D , D ), which is composed of a junction between a diffused layer used for forming the circuit element and a metal wiring layer, is used in the circuit for preventing the latch-up action of each of the parasitic thyristors (T -T ). Thereby, the area of the semiconductor device can be made smaller while the semiconductor device can have a higher protection effect.

IGBT, control circuit, and protection circuit on same substrate

A power converter individually comprises a first semiconductor device < > and a second semiconductor device < >. In the first semiconductor device < >, a power conversion element such as an IGBT < >, Zener diodes < >, a waveform shaping circuit < >, a heating cutoff circuit < > and a protective element < > are formed on the same chip employing a p-type silicon substrate. In the second semiconductor device < >, a Schmidt circuit < >, a power supply circuit < >, a high voltage detection circuit < >, a protective element < >, a logic gate < > and an output circuit formed by a pnp transistor < > are formed on the same chip employing a p-type silicon substrate. Thus, a power converter capable of reducing the circuit scale as a whole is obtained.

Power converter with power converter element and controller formed on different semiconductor substrates

An object is to reduce the offset voltage between the input and output in a wide range of output current with a simple circuit configuration. Transistors (Q,), (Q,) and (Q,) have a size ratio of m:n:1, transistors (Q,) and (Q,) have a size ratio of 1:p, and transistors (Q,) and (Q,) have a size ratio of &lcub;(m&plus;n&plus;1)/p:&rcub;). Accordingly a current which is (m&plus;n&plus;1) times the current flowing in the transistor (Q,) is supplied to the emitter electrodes of the transistors (Q,) and (Q,). Since the ratio between the currents flowing in the transistors (Q,) and (Q,) is the same as their size ratio m:n, the emitter-base voltages are equal between the transistors (Q,) and (Q,). As a result, the offset voltage between the voltage signal inputted to the input signal line (IN) and the voltage signal outputted from the output signal line (OUT) can be suppressed in a wide range of output current.

Buffer circuit and hold circuit

Semiconductor device and semiconductor circuit using the same

The present invention provides a power semiconductor device comprising a semiconductor substrate; a voltage-controlled transistor comprising a first electrode formed on the lower surface of the semiconductor substrate, a gate formed on the semiconductor substrate with a gate oxide interpolated in between and a second electrode formed on the semiconductor substrate; and a zener diode formed on the upper surface of the semiconductor substrate so as to be connected between the gate and the second electrode; wherein p-type regions and n-type regions alternately formed between the zener diode and the second electrode on the semiconductor substrate, a plurality of pad electrodes on the semiconductor substrate provided with the alternate p-type regions and n-type regions so as to allow one or not less than two diodes are series connected between the zener diode and the second electrode, and the distance between the adjacent pad electrodes is set so that when the diode is subjected to a current not less than a predetermined value, the respective pad electrodes are fused so that short-circuiting occurs between the adjacent pad electrodes.

Voltage-controlled power semiconductor device

A voltage divider circuit is connected between the output terminals of a constant-voltage power supply outputting a constant voltage. A constant-current source varies linearly, relative to temperature, the current level flowing to or from the voltage divider junction of the voltage divider circuit. The constant-current source comprises a first transistor and a second transistor connected to a current mirror circuit, and a resistor connected between the ground and the emitter of the second transistor. The base of the current extracting transistor is connected to the bases of the first transistor and the second transistor, and the collector and emitter are connected between the respective voltage divider junction and ground to obtain a current from the voltage divider junction. A current proportional to temperatures and inversely proportional to the value of the resistor can thereby be obtained from the voltage divider junction.

Reference voltage generating circuit with controllable linear temperature coefficient

An ion current detection apparatus for an internal combustion engine includes a voltage limiting device for limiting an amount of counterelectromotive force of a primary coil of ignition coil applied to switching elements, a capacitor for applying an ion current detection voltage to a spark plug, and an ion current detection circuit for detecting an ion current wherein the capacitor is connected to the voltage limiting device.

Ion current detection apparatus for an internal combustion engine

An ion current detection device of an internal combustion engine includes a detection voltage generation device which applies a voltage to an ignition plug to generate an ion current in a cylinder of the engine. A current to voltage conversion circuit detects and converts the generated ion current to a voltage signal. A bandpass filter extracts an ac component within a specified frequency range from the voltage signal produced by the current to voltage conversion circuit. An ion current threshold detection portion produces an ion current detection signal when the detected ion current exceeds a predetermined threshold current. A filter characteristic control circuit controls the characteristic of the bandpass filter to suppress the sensitivity of the filter for a predetermined period of time right after the ion current detection signal is detected and, after the predetermined period of time, increase the sensitivity of the filter for detection of the ac signal with the specific frequency.

Growing community of inventors

Tokyo, Japan

Yukio Yasuda