Semiconductor Energy Laboratory Co., Ltd.

Tdk Corporation

Other

Tkd Corporation

Yukio Yamauchi

Michio Arai

Takeshi Fukunaga

Naoya Sakamoto

Shunpei Yamazaki

Hidehito Kitakado

Masaya Kadono

Kazushi Sugiura

Mitsufumi Codama

Takeshi Fukada

Ichiro Takayama

Masaaki Hiroki

Masaaki Ikeda

Isamu Kobori

Katsuto Nagano

Mitsufumi Kodama

Nobuo Furukawa

Ichirou Takayama

Takashi Inushima

A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Semiconductor device and a method of manufacturing the same

An EL display having high operating performance and reliability is provided. LDD regionsthroughof a switching TFTformed in a pixel are formed such that they do not overlap gate electrodesandto provide a structure which is primarily intended for the reduction of an off-current. An LDD regionof a current control TFTis formed such that it partially overlaps a gate electrodeto provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

Electronic device and electronic apparatus

An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element () disposed in a pixel () are controlled by time, and the influence by the characteristic variability of a current controlling TFT () is prevented. When this method is used, a data signal side driving circuit () and a gate signal side driving circuit () are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

Light-emitting device including substrate having cavity, and method for fabricating the light-emitting device

Semiconductor device including light-emitting element

EL display device, driving method thereof, and electronic equipment provided with the EL display device

Method for manufacturing semiconductor device

Method of manufacturing active matrix display device

Growing community of inventors

Shizuoka, Japan

Yukio Yamauchi