Kabushiki Kaisha Toshiba

Fuji Photo Film Company, Limited

Mitsubishi Chemical Industries Limited

Other

Sony Corporation

Yukio Watanabe

Masayuki Ishikawa

Hideto Sugawara

Yasuo Ohba

Genichi Hatakoshi

Kazuhiko Itaya

Motoyuki Yamamoto

Atsushi Kunimatsu

Haruhiko Okazaki

Hajime Okuda

Hideo Shiozawa

Tsutomu Kimura

Mariko Suzuki

Koichi Nitta

Ryo Saeki

Chisato Furukawa

Masaki Okajima

Yoshihiro Kokubun

Kiyoji Ueno

Tamotsu Jitosho

Hideki Yasukawa

Yutaka Uematsu

Takayuki Kamei

Takanao Amatsubo

Katsuhiko Naruse

Shigeya Naritsuka

Fukumi Shimizu

Charles Ray Johns

Shigehiro Asano

Masakazu Suzuoki

Masahiro Morita

Tadashi Ozue

Yukie Nishikawa

Takeshi Yamazaki

Nobuyuki Tanaka

Takanobu Kamakura

Kuniaki Konno

Takafumi Nakamura

Hideki Nozaki

Yoshimitsu Kobayashi

Yoshifumi Sato

Naohiro Shimada

Nawoto Motegi

Toshihiko Yoshitomi

Hirohisa Abe

Kazuhiro Tamura

Yoshio Ariizumi

Masaaki Sugimoto

Kunio Bizen

Niyoko Watanabe

Shinzou Ogawa

Takumi Komoto

Shinichi Sanda

Makoto Yamamura

Tsunemitsu Hasegawa

Jun Sasaki

Miyoko Watanabe

Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.

Semiconductor light-emitting element

The present invention provides an image processing unit, an image processing system, and an image processing method capable of achieving a higher speed and a higher efficiency in a rendering and implementing a low cost of the system. The image processing unit according to the present invention comprises a main storing portion for storing information of three-dimensional objects, a plurality of calculating portions for processing images based on three-dimensional object information which are read from the main storing portion, and a hierarchical storing portion having a plurality of hierarchies and connected between the main storing portion and the plurality of calculating portions to store a part of information at a lower level into a higher level sequentially, wherein image processing by the plurality of calculating portions are performed in parallel.

Image processing unit, image processing system using the same, and image processing method

A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength &#x3bb; permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as&#x3bb; to&#x3bb; on the side surfaces.

Semiconductor light emitting element with improved light extraction efficiency

A renaming apparatus configured to set a correspondence between a physical register number and a logical register number. The apparatus includes a control register configured to store the correspondence between the physical register number and the logical register number and a control register setting part configured to set the control register in accordance with the content of an instruction, when an instruction for setting the correspondence between the physical register number and the logical register number is included in the issued string of instructions.

Renaming apparatus and processor

A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InGaP, where 0&#x2266;x, y&#x2266;1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InGaAlP, where x+y+z=1, and 0&#x2266;x, y, z&#x2266;1.

Semiconductor light-emitting device and method of manufacturing the same

A computer architecture and programming model for high speed processing over broadband networks are provided. The architecture employs a consistent modular structure, a common computing module and uniform software cells. The common computing module includes a control processor, a plurality of processing units, a plurality of local memories from which the processing units process programs, a direct memory access controller and a shared main memory. A synchronized system and method for the coordinated reading and writing of data to and from the shared main memory by the processing units also are provided. A hardware sandbox structure is provided for security against the corruption of data among the programs being processed by the processing units. The uniform software cells contain both data and applications and are structured for processing by any of the processors of the network. Each software cell is uniquely identified on the network. A system and method for creating a dedicated pipeline for processing streaming data also are provided.

Resource dedication system and method for a computer architecture for broadband networks

A semiconductor light emitting element and a semiconductor light emitting device, which are high in optical output, uniform in emission of light and high in production yield and productivity, comprise: an electrically conductive transparent substrate having a first surface and a second surface opposed to each other; a semiconductor epitaxial layer formed on a location of the first surface of the substrate; a first electrode formed on the semiconductor epitaxial layer; a second electrode formed on a location of the second surface of the substrate offset from alignment with the first electrode; and a groove formed to indent from the second surface of the substrate toward the first surface in a location between the first electrode and the second electrode.

Semiconductor light emitting element and semiconductor light emitting device

A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in a crystal orientation, having the first conductivity type, and consisting essentially of a material represented by a formula In Ga P, where 0&lE;x, y&lE;1, and x&plus;y&equals;1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula In Ga Al P, where x&plus;y&plus;z&equals;1, and 0&lE;x, y, z&lE;1.

Semiconductor light-emitting device

A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A first electrode is connected to the first compound semiconductor layer and is isolated from the second compound semiconductor layer. A current spreading layer is formed on the second compound semiconductor layer and a block is formed on the second compound semiconductor layer. A second electrode is formed on the block and is connected to the current spreading layer.

Compound semiconductor light emitter and a method for manufacturing the same

A current blocking layer (7) formed immediately below a transparent electrode (9) is formed of a semiconductor layer containing Al, and a bandgap equal to or longer than the emission wavelength. Since the current blocking layer (7) is formed of such semiconductor layer, an oxide film forms on or near the surface of the current blocking layer (7) in a process of forming the transparent electrode (9) such as an ITO film containing oxygen, and the current blocking layer functions effectively. The diameter of a bonding electrode (20) is set to be smaller than that of the current blocking layer (7), thus effectively outputting the light emitted. Furthermore, the oxidized current blocking layer can have a high breakdown voltage and, hence, can be formed to have a small thickness, thus improving step coverage upon forming the transparent electrode on the current blocking layer. By inserting a thin Zn layer (8) between the transparent electrode (9) and an ohmic layer (6), the adhesion therebetween can be improved.

Semiconductor light-emitting element having transparent electrode and

A semiconductor light emitting element exhibiting a characteristic of deflected luminous intensity distribution, a semiconductor light emitting device capable of making, even when the element is off the center, a luminous center close to the center, and an element scribing method having a high element separation rate without causing a crack and chipping of pellet edges. The semiconductor light emitting element involves the use of a scribed pellet 10 into which a wafer including a semiconductor layer such as a luminous layer that is stacked on a compound semiconductor substrate inclined at 5.degree. through 20.degree. to a surface (100) in a orientation [011], is subjected to an element separation process by a scribing method.

Semiconductor light emitting element, semiconductor light emitting

A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A first electrode is connected to the first compound semiconductor layer and is isolated from the second compund semiconductor layer. A current spreading layer is formed on the second compound semiconductor layer and a block is formed on the second compound semiconductor layer. A second electrode is formed on the block and is connected to the current spreading layer.

Compound semiconductor light emitter

A control rod mechanism for transmitting the rotation of an electric motor via a drive shaft to an elevator apparatus for raising and lowering a hollow piston on an upper end thereof, which is provided a control rod that controls the output of a nuclear reactor. The control rod mechanism is used to insert the control rod into a reactor core or remove it therefrom, and also to rapidly insert the control rod into the reactor core by the injection of hot water to force the hollow piston upward. The control rod mechanism includes a magnetic coupling having an inner magnet, which is divided into a plurality of parts and is disposed at a lower portion of the drive shaft in order to transmit the rotational power of the electric motor to the drive shaft. The control rod mechanism also includes a drive-side outer magnet, which is divided into a plurality of parts and is provided on a rotary shaft of the electric motor in an arrangement on an outer side of the inner magnet. The control rod mechanism further includes a circular cylindrical outer yoke on an inner surface of which the outer magnet is mounted on. The radial-direction position of an outer magnet installation surface on the outer yoke is the same as or further inward with respect to the radial-direction position of an inner surface of the outer yoke that is above the outer magnet installation surface.

Control rod drive mechanism

Growing community of inventors

Yokohama, Japan

Yukio Watanabe