Tokyo Electron Limited

Yukio Tojo

Mitsuhiro Okada

Yoshiyuki Fujita

Hitoshi Kato

Yuichi Takenaga

Naotaka Noro

Kazuaki Nishimura

Kenji Tago

Phillip Spaull

Toshitake Tsuda

Yuji Ito

In a continuous processing system, a controller of a heat treatment apparatus calculates a weight of each layer from input target film thicknesses of a phosphorous-doped polysilicon film (D-poly film) and an amorphous silicon film (a-Si film), and calculates activation energy of stacked films based on the calculated weight and activation energy. The controller prepares a stacked film model based on the calculated activation energy and a relationship of a temperature of each zone and film thicknesses of the D-poly film and the a-Si film, and calculates an optimum temperature of each zone by using the prepared stacked film model. The controller controls power controllers of heaters to set a temperature in a reaction tube to be the calculated temperature of each zone and forms stacked films on a semiconductor wafer by controlling a pressure adjusting unit, flow rate adjusting units, etc.

Continuous processing system, continuous processing method, and program

A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950&#xb0; C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.

Processing method for forming structure including amorphous carbon film

A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si&#x2014;C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer.

Method for forming laminated structure including amorphous carbon film

A batch processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950&#xb0; C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.

Batch processing method for forming structure including amorphous carbon film

A collecting unit is disposed on an exhaust passage of a semiconductor processing apparatus to collect by-products contained in an exhaust gas. The collecting unit includes a trap body detachably disposed inside a casing and configured to collect a part of the by-products. The trap body includes fins arrayed in a flow direction of the exhaust gas and having a surface on which a part of the by-products is deposited and trapped. The collecting unit further includes a receiving mechanism disposed inside the casing and configured to receive a part of the by-products that peels off from the trap body or an inner surface of the casing to prevent this part from being deposited on a bottom of the casing. The receiving mechanism is configured to allow a part of the by-products held thereon to be in contact with a cleaning gas from above and from below.

Collecting unit for semiconductor process

A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300&#xb0; C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300&#xb0; C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

Thin film forming apparatus cleaning method

A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH gas as a doping gas while maintaining a temperature of 550 to 750&deg; C.

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Nirasaki, Japan

Yukio Tojo