Semiconductor Energy Laboratory Co., Ltd.

Japan Display Inc.

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Heavy Industries Limited

Eastman-kodak Company

Japan Display Central Inc.

Nhk Spring Co., Ltd.

Toshiba Matsushita Display Technology Co., Ltd.

Sony Corporation

Sharp Kabushiki Kaisha Corporation

Other

Mitsubishi Heavy Industries Engineering, Ltd.

Victor Company of Japan, Limited

Mitsubishi Materials Corporation

Hitachi Heating Appliances Co., Ltd.

Yukio Tanaka

Jun Koyama

Shunpei Yamazaki

Satoshi Murakami

Kenji Nakao

Hidehito Kitakado

Daiichi Suzuki

Mitsuaki Osame

Hideto Ohnuma

Kazuhiro Nishiyama

Shou Nagao

Akio Takimoto

Tetsuo Fukami

Munehiro Azami

Hisahito Ogawa

Kazunori Komori

Yasushi Kubota

Koji Akiyama

Katsuhiko Kumagawa

Yoshio Seiki

Masanori Kimura

Hiroyuki Osora

Haruaki Hirayama

Naoko Yano

Yoshiharu Hirakata

Keisuke Hayashi

Hirofumi Wakemoto

Masanao Yonemura

Junko Asayama

Akihiro Sawata

Shinichi Komura

Shinichiro Oka

Masahiro Tada

Atsuhiro Yukumoto

Hideyuki Uechi

Toshinobu Yasutake

Yasunori Kuratomi

Atsushi Yuasa

Mika Oiwa

Hiroyuki Kimura

Osamu Itou

Toshiki Kaneko

Hiroshi Yoshioka

Takashi Nakamura

Hajime Washio

Takashi Okada

Satoshi Tanimura

Tamotsu Sakai

Etsuko Fujimoto

Toshiyuki Higano

Hiroshi Tsutsui

Hidefumi Araki

Masayuki Eda

Ryuji Yoshiyama

Shinji Ogino

Masahiro Kosuge

Masakazu Nose

Hyota Abe

Jun Sasahara

Akifumi Ogiwara

Ryoichi Tohmon

Tomoh Akiyama

Hisashi Ohtani

Noboru Kunimatsu

Hidehiro Sonoda

Kazuto Kobayashi

Hiroshi Shibata

Akira Ishikawa

Kazuo Inoue

Shigesumi Araki

Nobukazu Suzuki

Yoshio Ohashi

Masaru Uryu

Toshio Ito

Noriaki Senba

Ichiro Sato

Kaori Yoshida

Kenichi Katoh

Youichi Asakawa

Masaki Miyatake

Kazuyuki Sunohara

Emi Higano

Hidehiko Chimura

Yoshifumi Saeki

Keisuke Tsuda

Shinya Tachibana

Tetsuya Kawamura

Mikiya Sakurai

Satoshi Nishiyama

Makio Yamashita

Hisanobu Tanaka

Koji Higashino

Naoya Okuzumi

Hiroyoshi Ueno

Katsufumi Inoue

Katsuhiko Ichihara

Ritsuro Okano

Satoru Kondo

Koji Iwabuchi

A raw material fluid treatment plant is provided with a raw material reaction apparatus for reacting a raw material fluid to form a reaction gas. The raw material reaction apparatus includes preheaters and a reactor. The preheaters are heat exchangers that perform heat exchange between a second heat transfer medium and the raw material fluid to heat the raw material fluid. The reactor is a heat exchanger that performs heat exchange between a first heat transfer medium differing from the second heat transfer medium and the raw material fluid having been heated by the preheaters to heat and react the raw material fluid.

Raw material fluid treatment plant and raw material fluid treatment method

A raw material fluid treatment plant provided with a raw material reaction apparatus for reacting a raw material fluid to form a reaction gas. The raw material reaction apparatus includes preheaters and a reactor. The preheaters are heat exchangers that perform heat exchange between a second heat transfer medium and the raw material fluid to heat the raw material fluid. The reactor is a heat exchanger that performs heat exchange between a first heat transfer medium differing from the second heat transfer medium and the raw material fluid having been heated by the preheaters to heat and react the raw material fluid.

An ammonia decomposition facility includes a heating medium line configured to flow a heating medium heated by heat generated by a gas turbine, an ammonia supply line configured to flow ammonia, an ammonia decomposition device, and an ammonia removal device. The ammonia decomposition device is configured to use heat of the heating medium from the heating medium line, thermally decompose ammonia from the ammonia supply line, and generate a decomposition gas containing hydrogen, nitrogen, and residual ammonia. The ammonia removal device is configured to remove the residual ammonia contained in the decomposition gas from the ammonia decomposition device.

Ammonia decomposition facility, gas turbine plant equipped with same, and ammonia decomposition method

A CO shift catalyst according to the present invention reforms carbon monoxide (CO) in gas. The CO shift catalyst has one of molybdenum (Mo) or iron (Fe) as a main component and has an active ingredient having one of nickel (Ni) or ruthenium (Ru) as an accessory component and one or two or more kinds of oxides from among titanium (Ti), zirconium (Zr), and cerium (Ce) for supporting the active ingredient as a support. The temperature at the time of manufacturing and firing the catalyst is equal to or higher than 550&#xb0; C.

CO shift catalyst, CO shift reaction apparatus, and method for purifying gasified gas

A natural gas refining apparatus including a first separation membrane unit including a first separation membrane; and a second separation membrane unit provided in a subsequent stage of the first separation membrane unit. The second separation membrane unit includes a second separation membrane that allows an amine solution to circulate through the second separation membrane unit, and the natural gas refining apparatus refines raw natural gas containing COby passing the raw natural gas through the first and second separation membrane units, separating CO-rich gas with the first and second separation membranes, and absorbing COwith the amine solution circulating through the second separation membrane unit.

Natural gas refining apparatus and system

A liquid crystal display device according to an aspect of the invention includes a display region having a plurality of sub pixels. The sub pixels each include a pixel electrode and a thin film transistor electrically coupled to the pixel electrode. A transient leak current of each thin film transistor included in the sub pixels at both ends of the display region among the sub pixels provided on a line passing through the center of the display region in plan view is smaller than a transient leak current of each thin film transistor included in the sub pixels in a central portion including the center.

Liquid crystal display device

A system and method for separating COfrom natural gas, which ensure that no clogging or deterioration occurs in a gas separation membrane even after the gas separation membrane is used to remove carbon dioxide from the natural gas under conditions in which the natural gas is pressurized. First, an HS remover removes hydrogen sulfide from raw natural gas. Then, a compressor pressurizes the natural gas from which HS has been removed. After that, a cooler cools the pressurized natural gas so as to condense components that are a part of the natural gas. A gas/liquid separator removes the condensed components, and a COseparator, including a separation membrane for separating COremoves COfrom the natural gas from which the condensed components have been removed. An expander, which shares a drive shaft with the compressor, expands the natural gas from which COhas been removed and recovers energy therefrom.

System and method for separating carbon dioxide from natural gas

Included are an ammonia synthesis column that synthesizes ammonia from a raw material gas, a discharge line that discharges a synthetic gas, a water-cooled cooler that cools the synthetic gas with a coolant, disposed in the discharge line, an ammonia separator into which a synthetic gas after cooling is introduced and which separates the ammonia gas and a liquid ammonia from each other, a raw material return line that returns a raw material gas containing the separated ammonia gas to the ammonia synthesis column side as a return raw material gas, and a compressor that compresses the return raw material gas, disposed in the raw material return line. An ammonia concentration in the return raw material gas is 5 mol % or more, and an ammonia synthesis catalyst that synthesizes the ammonia gas in the ammonia synthesis column is a ruthenium catalyst.

Ammonia synthesis system and method

According to one embodiment, a display device includes a first substrate, a second substrate, a liquid crystal layer, a first alignment film, a pixel electrode, and a common electrode. The liquid crystal layer is disposed between the first substrate and the second substrate. The first alignment film is provided on the first substrate to be in contact with the liquid crystal layer. The pixel electrode is provided on the first substrate and covered with the first alignment film. The common electrode provided on the first substrate to form a lateral electric field. The liquid crystal layer is driven at a frequency of 40 Hz or less. A time constant of the liquid crystal layer is larger than a time constant of the first alignment film.

Alignment layers of liquid crystal display device having different time constants

According to one embodiment, a liquid crystal display device includes a liquid crystal display panel which includes a pixel electrode, a liquid crystal layer and an alignment film, and a driver. The driver drives the pixel electrode at a drive frequency of 1 to 20 Hz. The alignment film has a resistivity of 5&#xd7;10&#x3a9;&#xb7;cm or more.

A carbon monoxide (CO) Shift reaction apparatus and a CO shift conversion method are capable of increasing the service life of a CO shift catalyst and reducing loss of energy. The CO shift reaction apparatus includes a plurality of CO shift reaction units in which a plurality of CO shift catalysts haying mutually different active-temperature regions are arranged in a gas flow direction.

Carbon monoxide shift reaction apparatus and carbon monoxide shift conversion method

When an intermittent driving mode is carried out in a TFT using LIPS and &#x3b1;-Si for a pixel transistor, a flicker easily occurs. A display device includes a TFT including a gate, a source, and a drain; a signal line connected to the source; a pixel capacitance connected to the drain; a first power supply configured to supply a potential that breaks electricity conducted between the source and the drain to the gate; and a switch configured to supply a potential of the first power supply to the gate. The display device includes a scan period and a dwell period. The switch is turned on in the scan period, and the switch is turned off in the dwell period.

Display device with gate floating for reducing flicker

According to one embodiment, a liquid crystal display device includes an array substrate, a counter substrate, a liquid crystal layer and a driving unit. The driving unit is configured to perform polarity inversion driving by applying, to the pixel electrode, positive and negative video signals. When applying the video signals to the pixel electrode, the driving unit superposes a correction signal corresponding to a polarity inversion frequency and the gray level on the video signals in advance.

Liquid crystal display device and method of driving the same

There is provided a high-definition liquid crystal display device that can prevent flicker due to a reduction in the pixel potential in a low-frequency drive of about 10 Hz to reduce power consumption. The pixel has a TFT formed of Poly-Si as a switching element. In the pixel, a capacitance insulating film is formed on a planar first electrode on which a comb-shaped second electrode is fanned. When the film thickness of the insulating film is d and the dielectric constant at 10 Hz frequency is &#x2208;, it is given that &#x2208;d&#x2265;5&#xd7;10m at 10 Hz frequency. The capacitance insulating film does not have a hysteresis characteristic. The refractive index of the capacitance insulating film with respect to a light of a wavelength of 632.8 nm is 1.7 to 2.0.

Liquid crystal display device comprising a capacitance insulating film with a refractive index of 1.7 to 2.0 with respect to a light having a wavelength of 632.8 nm

This invention provides a semiconductor device having high operation performance and high reliability. An LDD regionoverlapping with a gate wiring is arranged in an n-channel TFTforming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regionsandnot overlapping with a gate wiring are arranged in an n-channel TFTforming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD regionthan in the LDD regionsand

Semiconductor device and fabrication method thereof

Growing community of inventors

Kanagawa, Japan

Yukio Tanaka