Hitachi, Ltd.

Nippon Hoso' Kyokai

Hitachi Displays, Ltd.

Other

Hitachi Automotive Systems, Ltd.

Hitachi Medical Corporation

Hitachi Device Engineering Co., Ltd.

Yukio Takasaki

Tadaaki Hirai

Sachio Ishioka

Keiichi Shidara

Kenkichi Tanioka

Tatsuo Makishima

Toshihisa Tsukada

Kazutaka Tsuji

Yasuhiko Nonaka

Tatsuro Kawamura

Eiichi Maruyama

Yoshinori Imamura

Takashi Yamashita

Kenji Sameshima

Hirofumi Ogawa

Yasuo Tanaka

Junichi Yamazaki

Yasuharu Shimomoto

Eisuke Inoue

Hideaki Yamamoto

Naohiro Goto

Chushirou Kusano

Kazuhisa Taketoshi

Hirokazu Matsubara

Tsuyoshi Uda

Masaaki Aiba

Toru Baji

Saburo Ataka

Eikyuu Hiruma

Eikyu Hiruma

Mitsuo Kosugi

Makoto Ohkura

Shiro Suzuki

Mutsuko Hatano

Takeo Shiba

Yoshinobu Kimura

Akira Sasano

Kazuo Takeda

Mikio Hongo

Norio Koike

Takeshi Noda

Mitsuharu Tai

Hironobu Abe

Masanao Yamamoto

Akio Yazaki

Masakazu Saito

Kiyohisa Inao

Misao Kubota

Yochizumi Ikeda

Takahiro Ochiai

Toshiki Kaneko

Iwao Takemoto

Masahiro Tanaka

Masaharu Kubo

Shusaku Nagahara

Hisatake Yokouchi

Haruhisa Ando

Jun Gotoh

Kenichi Okajima

Yoichi Onodera

Yoshiaki Mori

Haruo Itoh

Katsutoshi Saito

Katsunori Suzuki

Sho Matsumoto

Masayuki Tsuneoka

Fumihiko Ando

Kouichi Koike

Takaaki Unnai

Shirou Suzuki

Takao Kuriyama

Takakazu Funo

Yoshizumi Ikeda

Tetshuhiko Takahashi

Yohitsumu Ikeda

Teruo Uchida

A sealed battery cell including an anti-explosion mechanism disposed between an electrode group and a top cover, and that deforms or cleaves due to elevation of internal pressure in the battery cell, the electrode group being comprised of a positive electrode and a negative electrode that are laminated together; wherein the anti-explosion mechanism includes a diaphragm, a connection plate welded to the diaphragm, and a connection lead welded to the connection plate; and the connection plate includes a thinner portion where a spot at which the connection lead is connected is formed as thin, and a thicker portion where the thinner portion is not formed, and a lower surface of the thinner portion is formed as coincident with a lower surface of the thicker portion, or as hollowed out from the lower surface of the thicker portion.

Sealed battery cell and manufacturing method thereof

A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (&#x3bc;m) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x&#xd7;(1/y)&#x3c;25 &#x3bc;s.

Manufacturing method of semiconductor film and image display device

The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Process for producing polysilicon film

A flexible display device includes: a flexible substrate which constitutes at least part of an envelope of the flexible display device; a plurality of pixels disposed on the flexible substrate; a group of terminals which is formed at a first portion on one surface of the flexible substrate and supplies signals to the plurality of pixels; and a reinforcing member attached to at least a second portion on another surface of the flexible substrate which faces the first portion across a thickness of the flexible substrate.

Flexible display device

An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Image display device using transistors each having a polycrystalline semiconductor layer

The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation

An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.

Image pickup tube utilizing third electrode and its operating method

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Photoconductive imaging apparatus

An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.

Image pick-up tube and apparatus having the same

Photo-sensor and method for operating the same

Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Amorphous photoelectric conversion device with avalanche

An X-ray television apparatus applies an X-ray to an object to be inspected, converts the X-ray projection image of the object into an optical image by a fluorescent screen or an X-ray image intensifier, picks up the optical image by a TV camera, displays the video signal obtained by a TV monitor for fluoroscopic monitoring, and records radiograph of the object by using the video signal. Avalanche multiplication is caused on the photoconductive layer of the image pick-up tube of the TV camera so as to enable monitoring or imaging with high sensitivity at a low X-ray dose rate.

X-ray television apparatus

A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

Electric conversion device

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Photoconductive device and method of operating the same

Growing community of inventors

Kawasaki, Japan

Yukio Takasaki