Hitachi, Ltd.

Horiba, Ltd.

Renesas Technology Corp.

Yukio Takano

Yoshihisa Fujisaki

Tsutomu Ishiba

Naoki Yamamoto

Yoshinori Hosokawa

Shigeo Kato

Masahiko Ogirima

Michiyoshi Maki

Shigeru Aoki

Kenji Yoshino

Yoshihiko Motoi

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a III-V single crystal at a normal temperature is set to at most 4&times;10 , and the density of Si atoms contained in the III-V single crystal is set to at most 1&times;10 cm , whereby the characteristics of semiconductor elements whose parent material is the III-V single crystal can be made uniform.

III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer si reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4&times;10 , and the density of Si atoms contained in the GaAs single crystal is set to at most 1&times;10 cm , whereby the characteristics of semiconductor elements whose parent material is the GaAs single crystal can be made uniform.

GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4&times;10,and the density of Si atoms contained in the GaAs single crystal is set to at most 1&times;10,cm,, whereby the characteristics of semiconductor elements whose parent material is the GaAs single crystal can be made uniform.

GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the same

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and the minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent material (substrate) is the GaAs single crystal can be made uniform.

GaAs single crystal as well as method of producing the same, and

By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements inthe wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent matrial is the GaAs single crystal can be made uniform.

Method of fabricating semiconductor device utilizing a GaAs single

An apparatus for heating a sample within a vacuum chamber according to the present invention includes a preliminary exhaust chamber connected with a vacuum chamber of an analyzer and the like through a gate valve. A sample stage is disposed within the vacuum chamber, and a sample holder is detachably disposed on this stage. The preliminary exhaust chamber is provided with a transfer device for transferring the sample holder between the preliminary exhaust chamber and the vacuum chamber to mount the sample holder on the stage and detach the sample holder from the stage. The sample holder is provided with a heater and a temperature-measuring element mounted thereon, the heater and temperature-measuring element being connected with the respective connectors mounted on the sample holder. A fixed connector is connected with the connectors when the sample holder is mounted on the stage by means of the transfer device.

Apparatus for heating sample within vacuum chamber

An X-ray analyzer for performing both X-ray fluorescence and X-ray diffraction analysis is provided with an X-ray source, an X-ray guide tube for collimating X-rays from the source, a vacuum tank in which the guide tube is partially disposed, a rotatable sample table for holding a sample adjacent the guide tube, and an X-ray detector movable away from and towards the sample table, and also rotatable independently of the sample table.

X-ray analyzer

This invention relates to a semiconductor substrate and a method of manufacturing the same. In a semiconductor manufacturing process for a Si single crystal wafer or the like, before the step of mirror polishing, the rear surface of a Si wafer is ground to form a damaged layer having a certain fixed thickness, the Si wafer is subsequently etched by chemical etching if desired, and the rear surface is further formed with an oxide film by thermal oxidation if desired, whereby a semiconductor substrate exhibiting an intense gettering effect is manufactured.

Growing community of inventors

Musashimurayama, Japan

Yukio Takano