Hitachi, Ltd.

Tdk Corporation

Renesas Electronics Corporation

Jfe Steel Corporation

Other

Fujitsu Corporation

Ihi Corporation

Nippon Telegraph and Telephone Corporation

Sony Corporation

Kabushiki Kaisha Toshiba

Nec Electronics Corporation

Agc Inc.

Hitachi Automotive Systems, Ltd.

Kawasaki Steel Corporation

Hosiden Corporation

Yukio Takahashi

Takashi Suzuki

Kunihiko Takao

Hideki Machimura

Hiroyuki Yamada

Isao Hayase

Kouichi Kakuda

Ryuichi Wada

Satoshi Shimada

Hiroyuki Tanoue

Takeshi Shibayama

Masayoshi Kotaki

Takahiro Sato

Kenji Tojo

Naoki Kikuchi

Masaru Ito

Atsuji Saito

Hitoshi Matsuura

Yuji Miki

Yoshimi Yamamoto

Atsushi Suginuma

Shota Amano

Yuzo Kadomukai

Kazuji Yamada

Masami Abe

Shingo Sato

Minoru Hashida

Noboru Baba

Kenichi Kawashima

Kazuo Ojima

Katsuyoshi Terakado

Tatsuro Suzuki

Yoshitaka Matsuoka

Masaki Takahashi

Yasuhiro Ito

Takashi Yokoyama

Hiroshi Harada

Kenji Hiraku

Yasumasa Matsuda

Yoshikazu Hoshi

Ryuta Sonoda

Takuya Ono

Seiichi Ugai

Masao Mizukami

Tomoyuki Tobita

Takuya Aoki

Susumu Murakami

Shinichi Kaneda

Yasuyuki Shibui

Akira Nagasu

Nobuhiko Oda

Shinichi Kondo

Masahiro Shimizu

Yusuke Vincent Fujii

Hiroshi Nakai

Yoshito Nakazawa

Takashi Ito

Kazutaka Takagi

Ken Takahashi

Hideo Suzuki

Nobuaki Mitamura

Kenichiro Tokuo

Yusuke Nagai

Hidekazu Sato

Takeshi Tsuchiya

Masayuki Suganami

Makoto Yoshino

Yutaka Uneura

Yozo Nakamura

Fumio Uchikoba

Motohisa Nishihara

Kunihiko Kawasaki

Katsumi Miyazaki

Kazuhiro Toyoda

Takeru Sasaki

Nagayasu Bessho

Masahiro Endo

Kousuke Nakamura

Kenji Okuna

Mikio Yamaguchi

Masaru Yasui

Shuji Takeuchi

Shunsuke Aritomi

Tadahiko Nogami

Akihiko Oide

Tetsuya Yoshida

Masanori Tanabe

Kazutake Uehira

Toshifumi Kodama

Yasuo Matsushita

Hideaki Isogai

Takafumi Ueda

Raitarou Masaoka

Shunichi Mitsuya

Hidenobu Umeda

Masashi Shimoyasu

Atsuo Kishi

Shigenobu Sakai

Masaya Takahashi

Kosaku Sayo

A gate electrode is formed inside a trench via a gate insulating film. The gate insulating film formed on a semiconductor substrate is removed. An insulating film is formed on the semiconductor substrate. A p-type base region is formed in the semiconductor substrate. An n-type emitter region is formed in the base region. Hydrogen annealing process is performed to the semiconductor substrate. A boundary between the base region and the emitter region is located at a position deeper than the insulating film formed between a side surface of the trench and the gate insulating film.

Semiconductor device and method of manufacturing the same

In the multi-layer coil component, the hole portion is provided in the vicinity of the side surface of the element body, and the distance from the tip position of the external electrode to the hole portion is shorter than the distance from the tip position of the external electrode to the coil. Therefore, when a crack is generated starting from the tip position of the external electrode on the mounting surface, the crack progress toward the hole portion located at a distance closer than the coil. Therefore, in the multi-layer coil component, splitting of the coil due to the crack can be prevented.

Multi-layer coil component

To suppress downward radiation of electromagnetic waves from an antenna unit. An antenna unit to be used by being installed so as to face a window glass for a building, the antenna unit comprising a plurality of array antennas, wherein each of the plurality of array antennas has a plurality of radiating elements and at least one conductor situated on an interior side relative to the plurality of radiating elements, and where the effective wavelength of the plurality of array antennas at the operation frequency is A, and an integer of 0 or more is n, the distance from the center of the upper radiating element among the plurality of radiating elements to the upper edge of the conductor in the up-and-down direction is (0.5+n)A±0.22A, as seen in a plan view of the antenna unit.

Antenna unit and window glass

An antenna unit used by being attached to window glass for a building includes a radiating element, a wave directing member arranged on an outdoor side with respect to the radiating element, and a conductor arranged on an indoor side with respect to the radiating element, wherein where a distance between the radiating element and the wave directing member is denoted as a, and where a relative permittivity of a medium constituted by a dielectric member between the radiating element and the wave directing member is denoted as ε, the distance a is (2.11×ε−1.82) mm or more.

Antenna unit, antenna unit-attached window glass, and matching body

A molten metal component estimation device including: an input device configured to receive measurement information about a refining facility including measurement results regarding an optical characteristic; a model database that stores model expressions and model parameters, regarding a blowing process reaction, including a model expression and model parameters representing a relation between the oxygen efficiency in decarburization and a carbon concentration in a molten metal in the refining facility; and a processor configured to: estimate component concentrations of the molten metal including the carbon concentration in the molten metal by using the measurement information, the model expressions and the model parameters; estimate the carbon concentration in the molten metal based on the measurement results; and determine the model expression and the model parameters to be used when estimating the component concentrations of the molten metal, based on the estimation result of the carbon concentration in the molten metal.

Molten metal component estimation device, method of estimating molten metal component, and method of manufacturing molten metal

A top-blowing lance nozzle is configured to freely switch an adequate expansion condition so as to control an oxygen-blowing amount and a jetting velocity independently of each other without requiring a plurality of lance nozzles or a mechanically movable part. A lance nozzle is configured to blow refining oxygen to molten iron charged in a reaction vessel while a gas is blown from a top-blowing lance to the molten iron. One or more blowing holes for blowing a working gas are on an inner wall side surface of the nozzle, at a site where the lance nozzle has a minimum cross-sectional area in a nozzle axis direction or at a neighboring site of the site.

Lance nozzle

A ferrite composition includes main-phase particles, first sub-phase particles, second sub-phase particles, and a grain boundary. At least 10% or more of the main-phase particles contain a portion whose Zn concentrations monotonously decrease from a particle surface toward a particle central part along a length of 50 nm or more. The first sub-phase particles contain ZnSiO. The second sub-phase particles contain SiO. A total area ratio of the first sub-phase particles and the second sub-phase particles is 30.5% or more.

Ferrite composition and multilayer electronic component

A ferrite sintered body of the invention includes; a main component including 48.65 to 49.45 mol % of iron oxide in terms of FeO, 2 to 16 mol % of copper oxide in terms of CuO, 28.00 to 33.00 mol % of zinc oxide in terms of ZnO, and a balance including nickel oxide, and a subcomponent including boron oxide in an amount of 5 to 100 ppm in terms of BOwith respect to 100 parts by weight of the main component, in which the ferrite sintered body includes crystal grains having an average crystal grain size of 2 to 30 &#x3bc;m.

Ferrite sintered body and electronic component using thereof

In a method for oxygen-blowing refining of molten iron, an oxygen-containing gas as a main supply gas is supplied from an inlet side of a blowing nozzle for the oxygen-containing gas passing through an outer shell of the top-blowing lance and blown from the blowing nozzle while a control gas is jetted toward inside of the blowing nozzle for at least part of a period of the oxygen-blowing refining from a spout arranged in a side face of the nozzle at a site where the cross-sectional area of the nozzle minimum takes the minimum in the axial direction of the nozzle or a neighborhood thereof so that at least part of the spout exists in each space formed by dividing into two portions by an arbitrary plane passing through a central axis of the nozzle.

Method for oxygen-blowing refining of molten iron and top-blowing lance

A ferrite composition includes a main component and a sub-component. The main component includes 10.0 to 38.0 mol % of a Fe compound in terms of FeO, 3.0 to 11.0 mol % of a Cu compound in terms of CuO, 39.0 to 80.0 mol % (excluding 39.0 mol %) of a Zn compound in terms of ZnO, and a balance of a Ni compound. The sub-component includes 10.0 to 23.0 parts by weight of a Si compound in terms of SiO, 0 to 3.0 parts by weight (including 0 parts by weight) of a Co compound in terms of CoO, and 0.1 to 3.0 parts by weight of a Bi compound in terms of BiOwith respect to 100 parts by weight of the main component.

When the decarburization refining of molten iron is performed by top-blowing oxygen gas from the top blowing lance, the oscillation of molten iron, a bubble burst, and spitting due to the bubble burst are suppressed. A refining method for a converter includes decarburizing molten iron in the converter with a top blowing lance having Laval nozzles disposed at the lower end thereof by blowing oxygen gas on the surface of the molten iron in the converter through the Laval nozzles, in which one or both of an oxygen feeding rate from the top blowing lance and lance height LH are adjusted in such a manner that an oxygen accumulation index S(F) is 40 or less.

Method for operating converter

A ferrite composition includes a main component and an accessory component. The main component includes 43.0 to 51.0 mol % of iron oxide in terms of FeO, 5.0 to 15.0 mol % of copper oxide in terms of CuO, 1.0 to 24.9 mol % of zinc oxide in terms of ZnO, and a remaining part of nickel oxide. The accessory component includes 0.2 to 3.0 pts. wt. of silicon compound in terms of SiO, 3.0 to 8.0 pts. wt. of cobalt compound in terms of CoO(excluding 3.0 pts. wt.), and 0.2 to 8.0 pts. wt. of bismuth compound in terms of BiOwith respect to 100 pts. wt. of the main component.

Ferrite composition, ferrite sintered body, electronic device, and chip coil

A ferrite composition includes a main component that includes more than 44.0 mol % to 50.0 mol % or less of an Fe compound, 5.5 to 14.0 mol % of a Cu compound, 4.0 to 39.0 mol % of a Zn compound, and a balance of less than 40.0 mol % of a Ni compound. The ferrite composition further includes a subcomponent that includes, with respect to 100 parts by weight of the main component, more than 3.0 parts by weight to 13.0 parts by weight or less of an Si compound, more than 2.0 parts by weight to 10.0 parts by weight or less of a Co compound, and 0.25 to 5.00 parts by weight of a Bi compound. A weight ratio of the content of the Co compound to the content of the Si compound is 0.4 to 2.9.

A ferrite composition includes a main component and an accessory component. The main component includes 18 to 30 mol % of iron oxide in terms of FeO, 4 to 14 mol % of copper oxide in terms of CuO, 0 to 6 mol % of zinc oxide in terms of ZnO, and a remaining part of nickel oxide. The accessory component includes 0.30 to 1.83 pts.wt. of silicon compound in terms of SiO, 2.00 to 10.00 pts.wt. of cobalt compound in terms of CoO, and 1.00 to 3.00 pts.wt. of bismuth compound in terms of BiOwith respect to 100 pts.wt. of the main component. A cobalt compound content in terms of CoOdivided by a silicon compound content in terms of SiOis a value of 5.5 to 30.0.

Ferrite composition and electronic device

An actuating rod of an actuator is rotatably connected to a distal end portion of a link member, a connecting pin is integrally provided at a distal end portion of the actuator rod, a pin hole for allowing insertion of the connecting pin is penetrated and formed at a distal end portion of the link member, and a disc spring for biasing the distal end portion of the link member and the distal end portion of the actuating rod in an axial direction (both sides of the axial direction) of the actuating rod as directions opposite to each other between the distal end portion of the link member and the distal end portion of the actuator rod.

Variable flow valve mechanism and turbocharger

Growing community of inventors

Tokyo, Japan

Yukio Takahashi