Fujifilm Corporation

Tdk Corporation

Tokyo Institute of Technology

Yukio Sakashita

Tsutomu Sasaki

Hiroyuki Kobayashi

Takamichi Fujii

Hiroshi Funakubo

Yuuichi Okamoto

Minoru Kurosawa

Tetsu Miyoshi

Yoshikazu Hishinuma

Kyung-Ku Choi

Yuki Miyamoto

Yasutoshi Hirabayashi

Hiro Einishi

Takahisa Shiraishi

Mutsuo Ishikawa

Munenori Nakai

A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 &#x3bc;m and includes a perovskite oxide represented by a general formula (P) given below:(K,A,B)(Nb,C,D)O&#x2003;&#x2003;(P),where: 0&#x3c;w&#x3c;1.0, 0&#x2266;x&#x2266;0.2, 0&#x2266;y&#x3c;1.0, 0&#x2266;z&#x2266;0.2, 0&#x3c;w+x&#x3c;1.0, A is an A-site element having an ionic valence ofother than K, B is an A-site element, C is a B-site element having an ionic valence of, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.

Perovskite oxide film and ferroelectric film using the same, ferroelectric device, and method for manufacturing perovskite oxide film

A layered structure, including a flexible resin substrate and a composite piezoelectric film formed on the resin substrate and constituted by an organic polymer resin matrix and a plurality of inorganic piezoelectric bodies dispersed in the matrix.

Layered structure and piezoelectric device using the same

A polymer composite piezoelectric body is obtained by conducting polarization treatment on a composite having piezoelectric particles uniformly mixed by dispersion in a polymer matrix containing cyanoethylated polyvinyl alcohol.

Polymer composite piezoelectric body and manufacturing method for the same

Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (&#xb0; C.), a difference Vs&#x2212;Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied:(&#xb0; C.)&#x2267;400&#x2003;&#x2003;(1)&#x2212;0.2+100&#x3c;()&#x3c;&#x2212;0.2+130&#x2003;&#x2003;(2)

Process for forming a film, piezoelectric film, piezoelectric device, and liquid discharge apparatus

A perovskite oxide material containing: BiFeOas a first component; a second component containing at least one perovskite oxide which is constituted by A-site atoms having an average ionic valence of two and has a tendency to form a tetragonal structure; and a third component containing at least one perovskite oxide which has a tendency to form one of monoclinic, triclinic, and orthorhombic structures; where each perovskite oxide in the first component, the second component, and the third component contains A-site atoms, B-site atoms, and oxygen atoms substantially in a molar ratio of 1:1:3, and the molar ratio can deviate from 1:1:3 within a range.

Perovskite oxide material, ferroelectric compound, piezoelectric body, piezoelectric device, and liquid discharge device

Disclosed is a non-lead perovskite oxide having a low Curie temperature and high ferroelectricity represented by General Formula (P) given below.(Bi,Ba,X)(Fe,Ti,Mn)O&#x2003;&#x2003;(P) (where, Bi and Ba are A-site elements, X is one kind or a plurality of kinds of A-site elements, other than Pb and Ba, with an average ion valence of 2. Fe, Ti, and Mn are B-site elements. O is oxygen. 0&#x3c;x1+X2&#x3c;1.0, 0&#x3c;x3&#x3c;1.0, 0&#x3c;y1+y2&#x3c;1.0, 0&#x2266;y3&#x3c;1.0, 0&#x3c;x1, 0&#x3c;x2, 0&#x3c;y1, 0&#x3c;y2. The standard molar ratios among A-site elements, B-site elements, and oxygen are 1:1:3, but the molar ratios among them may deviate from the standard ratios within a range in which a perovskite structure may be formed.)

Perovskite oxide, oxide composition, oxide body, piezoelectric device, and liquid discharge apparatus

A perovskite oxide, which includes a first component represented by General Formula (P1) given below and a second component represented by General Formula (P2) given below.(Bi, X) (Fe, Mn)O&#x2003;&#x2003;(P1)(A, Y)BO&#x2003;&#x2003;(P2)(where, Bi is an A-site element and X is an A-site element with an average ion valence of not less than four. A is one kind or a plurality of kinds of A site elements other than Pb with an average ion valence of two, Y is a one kind or a plurality of kinds of A-site elements with an average valence of not less than three. Fe and Mn are B-site elements, and B is one kind or plurality of kinds of B-site elements with an average ion valence of four.) 0.6&#x2266;x1&#x3c;1.0, 0&#x2266;x2&#x2266;0.4, 0.65&#x2266;y1&#x3c;1.0, 0&#x2266;y2&#x2266;0.4, x2+y2&#x3e;0, 0.6&#x2266;z1&#x3c;1.0, 0&#x2266;z2&#x2266;0.4.

A ferroelectric oxide structure includes a substrate and a ferroelectric thin-film deposited on the substrate. The ferroelectric thin-film has a thickness of greater than or equal to 200 nm and a tetragonal crystal system. The ferroelectric thin-film has (100) single-orientation crystal orientation.

Ferroelectric oxide structure, method for producing the structure, and liquid-discharge apparatus

An interior tire power generation apparatus includes a piezoelectric section having an inorganic piezoelectric body of a perovskite type oxide represented by General Formula (PX) below; a pair of electrodes for extracting an electric charge generated in the piezoelectric section when strained by an external force exerted on the tire; and an energy storage unit for storing the extracted electric charge.(Bi, A) (B, C)O&#x2003;&#x2003;(PX)

Interior tire power generation apparatus and tire monitoring system using the same

A process for producing a piezoelectric oxide having a composition (A, B, C)(D, E, F)O, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4),0.98&#x2266;()&#x2266;1.01,&#x2003;&#x2003;(1)()&#x3e;1.0,&#x2003;&#x2003;(2)()&#x3c;1.0, and&#x2003;&#x2003;(3)()&#x3c;()&#x3c;(),&#x2003;&#x2003;(4)where TF(P) is the tolerance factor of the perovskite oxide, and TF(ADO), TF(BEO), and TF(CFO) are respectively the tolerance factors of the compounds ADO, BEO, and CFO.

Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

A perovskite oxide represented by a general expression,(A, B)(C, D, X)O.(where, A: an A-site element, A=Bi, 0&#x3c;a, B: one or more types of A-site elements, 0&#x2266;b&#x3c;1.0, C: an B-site element, C=Fe, 0 &#x3c;c&#x3c;1.0, D: one or more types of B-site elements, 0&#x2266;d&#x3c;1.0, 0&#x3c;b+d, X: one or more types of B-site elements, the average valence of which is greater than the average valence of C and D in chemical formula, 0&#x3c;x&#x3c;1.0, (average valence of A-site in chemical formula) +(average valence of B-site in chemical formula)&#x3e;6.0, O: oxygen, and standard molar ratio among A-site elements, B-site elements, and oxygen is 1:1:3, but it may deviate from the standard within a range in which a perovskite structure is possible).

A piezoelectric device which includes a piezoelectric body having piezoelectricity and a pair of electrodes for applying an electric field to the piezoelectric body in a predetermined direction in which a piezoelectric strain constant d(pm/V) and a relative pemittivity &#x3b5;of the piezoelectric body satisfy Formulae (1) and (2) below. This makes the piezoelectric device excellent both in transmission and reception capabilities and appropriate for use as a piezoelectric actuator, a sensor, an ultrasonic sensor, or a power generating device.100&#x3c;&#x3b5;&#x3c;1500&#x2003;&#x2003;(1)(pm/V)&#x3e;12&#x221a;&#x3b5;&#x2003;&#x2003;(2).

Piezoelectric device, piezoelectric actuator having the same, liquid discharge apparatus, and power generating apparatus

A process for producing a piezoelectric oxide having a composition (Ba, Bi, A)(Ti, Fe, M)O, where each of A and M represents one or more metal elements. The composition is determined so as to satisfy the conditions (1) and (2),0.98&#x2266;TF(P)&#x2266;1.02,&#x2003;&#x2003;(1)TF(BiFeO)&#x3c;TF(AMO)&#x3c;TF(BaTiO),&#x2003;&#x2003;(2)where TF(P) is the tolerance factor of the perovskite oxide, and TF(BaTiO), TF(BiFeO), and TF(AMO) are respectively the tolerance factors of the oxides BaTiO, BiFeO, and AMO.

Perovskite oxide, process for producing the perovskite oxide, and piezoelectric device

A film formed on a substrate different from the monocrystalline perovskite substrate contains a piezoelectric oxide expressed as A(BC)Oother than Bi(FeSc)Oand Bi(Fe, Co)O, where 0&#x3c;x&#x3c;1.0, 0.5=y=0.9, A, B, and C are metallic elements, A represents one or more A-site elements including Bi as a main component, B represents one or more B-site elements including as a main component an element which can constitute a perovskite structure together with the one or more A-site elements represented by A, and C represents one or more B-site elements which are unable or hard to constitute a perovskite structure together with the one or more A-site elements represented by A.

Perovskite-oxide film, piezoelectric device, and liquid discharge device

A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the axis makes an angle &#x3b8;m satisfying the condition that &#x2212;45 degrees&#x3c;&#x3b8;m&#x3c;+45 degrees and &#x3b8;m&#x2260;0 degrees. Further, the spontaneous-polarization axis or the axis may be perpendicular to the thickness direction of the piezoelectric film.

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Kanagawa-ken, Japan

Yukio Sakashita