Murata Manufacturing Co., Ltd.

Murata Mfg. Co., Ltd.

Murata Manufactruing Co., Ltd.

Myrata Mfg. Co., Ltd.

Yukio Sakabe

Goro Nishioka

Hiroshi Takagi

Yasunobu Yoneda

Harunobu Sano

Yukio Hamaji

Yoshiaki Mori

Kazutaka Nakamura

Akinori Nakayama

Toshihiko Kittaka

Junichi Imanari

Akira Ando

Yasuyuki Naito

Masaru Fujino

Harufumi Mandai

Yoshiaki Kohno

Nagato Omori

Ryouichi Urahara

Yoshio Abe

Hiroji Tani

Michihiro Murata

Koji Hattori

Hiroaki Taira

Akira Shiratori

Hiroshi Komatsu

Takeshi Azumi

Yasuhisa Yamashita

Yoshinori Saito

Shozo Kobayashi

Hiroshi Morii

Hiroaki Ichikawa

Kiyoshi Nakano

Shintaro Karaki

Masayuki Yamada

Yukio Banba

Yukio Sakamoto

Atsuo Senda

Hideaki Niimi

Tatsuo Kunishi

Sadaaki Sakamoto

Mitsutoshi Kawamoto

Nobuyuki Wada

Hirofumi Sunahara

Tadashi Morimoto

Toshikazu Takeda

Hidetoshi Yamamoto

Osamu Kanoh

Tomoaki Ushiro

Yasushi Yoshida

Satoru Fujishima

Toshi Numata

Toshiki Nishiyama

Kiyoshi Hase

Yasushi Ueno

Terunobu Ishikawa

Kenji Kawabata

Hiroshi Seno

Seiji Sakai

Susumu Mori

Kazuhiko Kanai

Yutaka Shimahara

Junichi Saitoh

Yoshimasa Azuma

Hideaki Nimi

Horshi Takagi

Shouzo Kobayashi

Shuuji Watanabe

Takeyuki Kato

Tohru Higashi

Terunobi Ishikawa

A carbon-dioxide-gas absorber includes a main component of composite oxide, the composite oxide including Ti and X that is at least one of Sr and Ba, and the composite oxide having a molar ratio (X/Ti) of about 1.8 to about 2.2. A substance having a perovskite structure and an (X/Ti) of about 0.9 to about 1.1 or at least one selected from green sheets, green sheet wastes, green-sheet-laminate wastes, and precursors of green sheets including the substance is fired with at least one of strontium carbonate and barium carbonate. An apparatus includes a carbon-dioxide-gas-absorbing mechanical unit that allows a carbon-dioxide-gas absorber to absorb a carbon dioxide gas at about 1.0&#xd7;10to about 1.0&#xd7;10Pa and at about 500&#xb0; C. to about 900&#xb0; C.; and a carbon-dioxide-gas-evolving mechanical unit that evolves the absorbed carbon dioxide gas at about 1000 Pa or less and at at least about 750&#xb0; C.

Carbon-dioxide-gas absorber, method for separating carbon-dioxide-gas using carbon-dioxide-gas absorber, and apparatus for separating carbon-dioxide-gas including carbon-dioxide-gas absorber

A carbon dioxide absorbent that can absorb carbon dioxide at a temperature lower than that of a conventional BaTiOabsorbent, as well as at a high temperature of at least 700&#xb0; C., and desorb carbon dioxide at a temperature lower than that of the conventional absorbent is provided. The carbon dioxide absorbent does not expand significantly upon absorption of carbon dioxide, and exhibits high durability. The carbon dioxide absorbent is mainly composed of an oxide that contains Ba, Ca, and Ti, in which the molar ratio of Ca:(Ba+Ca) is 0.25:1 to 0.65:1, and the molar ratio of (Ba+Ca):Ti is 2.2:1 to 4.0:1. It preferably uses a green sheet, waste green sheet, waste green sheet laminate, or green sheet precursor used in a process of manufacturing electronic components can be as at least part of raw materials for making the carbon dioxide absorbent. A carbon dioxide absorption method using the carbon dioxide absorbent is also provided.

Carbon dioxide absorbent and carbon dioxide absorption method using the same

A work piece is mixed with Ni pieces having an average diameter of 1 mm and exhibiting catalytic activity to oxidation reaction of sodium phosphinate (NaH PO ) added as a reducing agent in a plating bath containing the reducing agent and a Ni salt to form a Ni&mdash;P film on an electrode made of Cu, Ag or Ag&mdash;Pd by auto-catalytic electroless plating. Then, the work piece is dipped in a plating bath containing an Au salt to form an Au film on the surface of the Ni&mdash;P film by substitutional electroless plating. This method is capable of forming a desired plating film only on a desired portion at a low cost.

Method of manufacturing electronic part, electronic part and electroless plating method

A piezoelectric ceramic composition is provided that does not contain Pb, and yet has a large electromechanical coupling coefficient in comparison with a bismuth layered compound, as well as a piezoelectric ceramic element using the composition. This piezoelectric ceramic composition includes at least the elements Ag, Li, Nb, and O, and has an electromechanical coupling coefficient k of not less than about 20%.

Piezoelectric ceramic composition and piezoelectric ceramic element using the same

The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 &mgr;m or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.

Barium titanate semiconductive ceramic

The invention provides a lithium secondary battery comprising a cathode having a lithium cobalt complex oxide or a lithium nickel complex oxide as a cathode active material, which is characterized in that said lithium cobalt complex oxide is in the form of hollow, spherical sinters of particles, and said sinters have a mean particle diameter of from about 1 to 5 micrometers and a specific surface area of from about 2 to 10 m,/g. The lithium secondary battery has high capacity and excellent charge-discharge cycle characteristics.

Lithium secondary battery

Inexpensive methods for producing small-sized monolithic electronic parts with improved functions by which an electroconductive film can be formed uniformly, thin, and in fine patterns on a ceramic green sheet, a carrier film, or a resin film, for example. A plurality of such ceramic green sheets, etc., each having the electroconductive film formed thereon, are laminated to give a ceramic laminate, which is then sintered. The electroconductive film is formed on each ceramic green sheet, etc., by the steps of: applying a hydrophilic liquid containing an activating catalyst comprising copper oxide, a palladium salt and an alkaline solution, for example, to thereby form a photosensitive film comprising said liquid containing said activating catalyst, exposing the photosensitive predetermined regions to thereby deposit palladium catalyst on said regions, washing out the non-exposed regions of the photosensitive film with water or a liquid consisting essentially of water, and dipping the ceramic green sheet having palladium catalyst deposited thereon in an electroless plating bath to thereby form the intended electroconductive film by electroless plating.

Method for producing monolithic electronic parts

A method of producing a multi-layer ceramic substrate involves the steps of preparing compact blocks including a raw ceramic functional material to be the passive component, preparing a raw composite laminated member having a plurality of laminated ceramic green sheets containing a ceramic insulating material and wiring conductors and preliminarily providing spaces in the inside such that the compact blocks fit into the spaces, arranging sheet type bases made from a raw ceramic not sintered at the baking temperature of the composite laminated member on the principal plane at both ends with respect to the lamination direction of the raw composite laminated member, baking the raw composite laminated member with the raw composite laminated member interposed by the sheet type bases so as to restrain the contraction at a temperature not more than about 1000&deg; C., and eliminating the unsintered sheet type bases.

Method of producing a multi-layer ceramic substrate

A method of manufacturing a lithium complex oxide involves the steps of 1) atomizing and pyrolyzing an aqueous or alcohol solution of metallic salt compounds constituting a lithium cobalt complex oxide or a lithium nickel complex oxide, and 2) annealing said lithium cobalt complex oxide or said lithium nickel complex oxide to increase the average particle diameter thereof to between about 1 and 5 micrometers and adjust the specific surface area thereof to between about 2 and 10 m,/g. The lithium complex oxide provided by this method is homogeneous and enables a long cycle life to withstand repeated charging and discharging and a high level of storage stability to be realized when used as an cathode active material of a secondary lithium battery.

Manufacturing method of lithium complex oxide comprising cobalt or nickel

The present invention provides a varistor which has low variation in electric characteristics and enhanced withstand electrostatic voltage and which can be fired at low temperature; as well as a method for producing the same. The laminated varistor comprises a sintered laminate formed by laminating alternating layers of semiconducting ceramic which comprises ZnO as a primary component and at least Bi oxide as a secondary component, and internal electrodes which predominantly comprise Pt and Pd as an inevitable impurity; and external electrodes maintaining electrical contact with the internal electrodes, wherein the Pd content is controlled to be about 0.1 wt. % or less based on the content of Pt, which is a primary component of the internal electrodes.

Material and paste for producing internal electrode of varistor,

A semiconductive ceramic composition having negative resistance-temperature characteristics, wherein the composition comprises lanthanum cobalt oxide as the primary component, and, as secondary components, at least one oxide of an element selected from B, Fe and Al and at least one oxide of an element selected from Si, Zr, Hf, Ta, Sn, Sb, W, Mo, Te, Ce, Nb, Mn, Th and P. A semiconductive ceramic composition having a resistivity of approximately 10 .OMEGA..multidot.cm to 100 .OMEGA..multidot.cm at room temperature is obtained by controlling the amount of additives. Since the resistivity at room temperature can be enhanced to several times or more that of the conventional compositions while characteristics of the conventional compositions are maintained, the composition may be widely applied to control heavy current.

Semiconductive ceramic composition and semiconductive ceramic element

In a capacitor, one capacitor electrode is formed on first principal face of a ceramic dielectric substrate. An area of a first capacitor electrode is smaller than an area of the first principal face. A second capacitor electrode is formed on a second principal face of the ceramic dielectric substrate, and connected to a lead electrode which is formed at the periphery of the first principal face of the ceramic dielectric substrate so as to be separated from the one capacitor electrode by a gap and to surround the first capacitor electrode. The ceramic capacitor is mounted on a semiconductor element through an insulating layer. The capacitor electrodes and lead electrode of the ceramic capacitor are connected to terminals of the semiconductor element by a wire bonding.

Ceramic capacitor and semiconductor device in which the ceramic

Provided is a semiconductive ceramic composition comprising a lanthanum cobalt oxide and having a negative resistance-temperature characteristic, which contains, as the side component, a chromium oxide in an amount of from about 0.005 to 30 mol % in terms of chromium, and also a semiconductive ceramic device comprising the composition. The device is usable for rush current inhibition, for motor start-up retardation and for halogen lamp protection, and is also usable in temperature-compensated crystal oscillators.

Semiconductive ceramic composition and semiconductive ceramic device

A plurality of dielectric ceramic sheets having inner electrodes thereon are laminated and sintered. The ceramic sheets are made of a non-reducing dielectric material, and the inner electrodes are made of a base metal or a base metal alloy. After a binder removing step, the laminate is sintered in a mixed gas which contains either one or both of carbon dioxide with a purity of 99.9% or more and carbon monoxide with a purity of 99.9% or more as its main constituent and further contains hydrogen and oxygen with their densities regulated.

Method of producing a laminated electronic device

A thin film of strontium titanate is formed on a substrate by immersing a substrate in an aqueous solution containing strontium ions and titanium alkoxide. The aqueous solution may contain not more than 20 vol % of one or more alkanolamines expressed by the general formula:

Production of strontium titanate thin films

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Kyoto, Japan

Yukio Sakabe