Fujitsu Corporation

Kyushu Fujitsu Electronics Limited

Fujitsu Automation Limited

Kyushu Fujitsu Elecronics Limited

Yukio Saigo

Kazuto Tsuji

Yoshiyuki Yoneda

Junichi Kasai

Masashi Takenaka

Masao Sakuma

Norio Taniguchi

Takashi Mashiko

Toshio Hamano

Michio Sono

Hideharu Sakoda

Yoshihiro Kubota

Ichiro Yamaguchi

Yoshihiko Ikemoto

Naomi Miyaji

Michio Hayakawa

Fumitoshi Fujisaki

Shinichiro Maki

Yasuo Yatsuda

Masafumi Tetaka

Nobuo Ooyama

Youichi Matae

Atsushi Yano

Syunichi Kuramoto

A semiconductor device and a method of producing the same are provided. The semiconductor device includes: a semiconductor chip; a resin package which seals the semiconductor chip; signal passages which guide the signal terminals of the semiconductor chip outward from the resin package; a grounding metal film in contact with the bottom surface of the semiconductor chip; and a grounding passage which is connected to the grounding metal film and guided outward from the resin package.

Semiconductor device and method of producing the same

A process for manufacturing semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Process for manufacturing a packaged semiconductor having a divided

A semiconductor device including a plurality of leads respectively made up of an inner lead and an outer lead, a semiconductor chip electrically connected to the inner leads, and a package encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package. The package has an upper part and a lower part which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and each of the outer leads have a wide part which is wider than other parts of the outer lead extending outwardly of the package only within the stepped part of the package.

Semiconductor device, carrier for carrying semiconductor device, and

A process for manufacturing semiconductor device including a plurality of leads respectively made up of an inner lead and an outer lead, a semiconductor chip electrically connected to the inner leads, and a package encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package. The package has an upper part and a lower part which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and each of the outer leads have a wide part which is wider than other parts of the outer lead extending outwardly of the package only within the stepped part of the package.

Process for manufacturing a semiconductor device having a stepped

A semiconductor device comprises a plurality of leads respectively made up of an inner lead and an outer lead, a semiconductor chip electrically connected to the inner leads of the leads, and a package encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package. The package has an upper part and a lower part which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and each of the outer leads have a wide part which is wider than other parts of the outer lead extending outwardly of the package only within the stepped part of the package.

A semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Semiconductor device and lead frame therefore

Semiconductor device and carrier for carrying semiconductor device

Growing community of inventors

Satsuma-gun, Japan

Yukio Saigo