Hokuriku Seikei Industrial Co., Ltd.

Yukio Okudo

Michito Miyahara

Hideo Eto

Makoto Saito

Masahiro Okesaku

Hiroshi Sanda

A silicon carbide member for a plasma processing apparatus is obtained by mixing an &#x3b1;-silicon carbide powder having an average particle size of 0.3 to 3 &#x3bc;m, with an amount of metal impurities in the &#x3b1;-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising BC in amount of 0.5 to 5 weight parts or AlOand YOin total amount of 3 to 15 weight parts; sintering a mixture of the &#x3b1;-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.

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Mie, Japan

Yukio Okudo