Sanyo Electric Co., Ltd.

Sapporo Breweries Limited

Yukio Okada

Noriaki Sakamoto

Yusuke Igarashi

Yoshiyuki Kobayashi

Kouji Takahashi

Junji Sakamoto

Eiju Maehara

Kazutoshi Ito

Naohiro Yoshigi

Hideo Maeba

Takeshi Nakamura

Koichiro Koie

Makoto Kihara

The present invention provides a microorganism belonging to the genus, wherein the microorganism has an ability to assimilate glycerol to produce hydrogen gas and 1,3-propanediol, and wherein the microorganism is capable of assimilating glycerol in the presence of 10 mass % glycerol.

Microorganism, and hydrogen production process, 1,3-propanediol production process and biodiesel liquid waste treatment method each using the microorganism

A nucleotide sequence and protein of the hop farnesyl pyrophosphate synthase is described herein.

Farnesyl pyrophosphate synthase proteins, nucleic acids and promoter regions therefor

An isolated and purified nucleic acid comprising a gene specifically expressed in hop lupulin glands. Hops are dioecious, and only female plants bear cones, the lupulin glands of which contain secondary metabolic products which provide bitterness and flavor to beer. These secondary metabolic products contain some pharmacologically effective compounds. In order to breed a more useful cultivar of hops by manipulating the constituent of such useful secondary metabolic products relying on genetic engineering techniques, this invention provides an isolated and purified nucleic acid comprising a gene specifically expressed in hop lupulin glands. By using this nucleic acid, it is possible to develop a novel method for breeding hops with transformation techniques and molecular selection techniques. Furthermore, the present invention also provides a nucleic acid comprising the regulatory region for specifically expressing genes in lupulin glands. This nucleic acid can be used also for hop breeding.

Isolated and purified nucleic acids comprising a gene and a regulatory region for the gene expression of the same

A heat radiation electrode () is exposed from the back surface of an insulating resin (), and a metal plate () is affixed to this heat radiation electrode (). The back surface of this metal plate () and the back surface of a first supporting member () are substantially within a same plane, so that it is readily affixed to a second supporting member (). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (), the metal plate () and the second supporting member ().

Semiconductor device, semiconductor module and hard disk

AS conductive patternsA toD are formed burying in a insulating resinand a conductive foilis formed being half-etched, thickness of the device is made thin. As an electrode for radiationD is provided, a semiconductor device superior in radiation is provided.

Semiconductor device with under-fill material below a surface of a semiconductor chip

The promoter region of the farnesyl pyrophosphate synthase gene that was expressed in the hop luplin gland in a specific manner was elucidated based on the genomic DNA of the hop farnesyl pyrophosphate synthase gene having the nucleotide sequence set forth in SEQ ID NO:2, the cDNA of the hop farnesyl pyrophosphate synthase gene having the nucleotide sequence set forth in SEQ ID NO:3, and the nucleotide sequence information on the genomic DNA and the cDNA. It will reveal the gene involved in the biosynthesis of secondary metabolites in a hop as well as the nucleotide sequence of the promoter gene that functions in the hop luplin gland in a tissue-specific manner. This will allow for the transformation of the hop by gene manipulations and the in vitro synthesis of the hop secondary metabolites.

Farnesyl pyrophosphate synthase protein, nucleic acid and promoter region thereof

The back surface of a semiconductor chip () is exposed from the back surface of an insulating resin (), and a metal plate () is affixed to this semiconductor chip (). The back surface of this metal plate () and the back surface of a first supporting member () are substantially within a same plane, so that it is readily affixed to a second supporting member (). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the metal plate () and the second supporting member ().

As conductive patternsA toD are formed burying in a insulating resinand a conductive foilis formed being half-etched, thickness of the device is made thin. As an electrode for radiationD is provided, a semiconductor device superior in radiation is provided.

Semiconductor device and method of manufacturing the same

A heat radiation electrode () is exposed from the back surface of an insulating resin (), and a metal plate () is affixed to this heat radiation electrode (). The back surface of this metal plate () and the back surface of a flexible sheet become substantially within a same plane, so that it is readily affixed to a second supporting member (). In addition, the top surface of the heat radiation electrode () is made protrusive beyond the top surfaces of the pads () to reduce the distance between the semiconductor chip () and the heat radiation electrode (). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (), the metal plate () and the second supporting member ().

A conductive pattern of a first layer isolated by an isolation trench is formed on a conductive foil, and a plurality of layers of the conductive patterns are formed thereon to create a multilayered wiring structure, and furthermore, a circuit element is mounted and molded with an insulating resin and the back surface of the conductive foil is etched. It is possible to implement a method of manufacturing a circuit device which provides very power saving and is suitable for mass production, then the circuit device having conductive patterns of a multilayered structure are provided.

Method of manufacturing circuit device

A first metal film made of a Cu plated film is formed on a radiation substrate A made of Al, and an island exposed from a back surface of a semiconductor device is adhered thereto. At that time, the back surface of the semiconductor device is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device . Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device . In addition, the heat generated from semiconductor elements can be radiated excellently from the island via a second supporting member A.

Semiconductor module and method of manufacturing the same

AS conductive patterns A to D are formed burying in a insulating resin and a conductive foil is formed being half-etched, thickness of the device is made thin. As an electrode for radiation D is provided, a semiconductor device superior in radiation is provided. Thickness of an electric connection means SD is substantially made definite as the electric connection means SD does not flow to a conductive path B by using a flow-prevention film DM.

Heat radiating semiconductor device

After conductive patterns are formed on the conductive foil every block by employing isolation trenches, conductive plating layers are arranged selectively on the conductive patterns. Therefore, it is possible to accomplish the circuit device manufacturing method by which the die bonding of the circuit elements can be applied stably and the wire bonding can also be applied stably and which can fit to the mass-production while saving the resource.

Method of manufacturing a circuit device with trenches in a conductive foil

A heat radiation electrode ( ) is exposed from the back surface of an insulating resin ( ), and a metal plate ( ) is affixed to this heat radiation electrode ( ). The back surface of this metal plate ( ) and the back surface of a flexible sheet become substantially within a same plane, so that it is readily affixed to a second supporting member ( ). In addition, the top surface of the heat radiation electrode ( ) is made protrusive beyond the top surfaces of the pads ( ) to reduce the distance between the semiconductor chip ( ) and the heat radiation electrode ( ). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode ( ), the metal plate ( ) and the second supporting member ( ).

Growing community of inventors

Gunma, Japan

Yukio Okada