Jsr Corporation

International Business Machines Corporation

Other

The University of Texas System

Jeol Ltd.

Jsr Micro Inc.

Yukio Nishimura

Hiromitsu Nakashima

Hiroki Nakagawa

Gouji Wakamatsu

Takeo Shioya

Hiroyuki Ishii

Masafumi Yamamoto

Eiichi Kobayashi

Toru Kajita

Kentarou Gotou

Daita Kouno

Hiroshi Ikeda

Tsutomu Shimokawa

Isao Nishimura

Makoto Sugiura

Nobuji Matsumura

Tomoki Nagai

Norihiko Sugie

Norihiro Natsume

Hiroshi Ito

Phillip Joe Brock

Toru Kimura

Masato Tanaka

Atsushi Nakamura

Takehiko Naruoka

Hirokazu Sakakibara

Yuji Yada

Hiroaki Nemoto

Yong Wang

Takayuki Tsuji

Takanori Kawakami

Eiji Yoneda

Takashi Chiba

Tomohiro Utaka

Jun Numata

Masaaki Miyaji

Yuusuke Asano

Akimasa Soyano

Hiroshi Dougauchi

Noboru Otsuka

Noboru Yamahara

Ratnam Sooriyakumaran

Takashi Mori

Robert David Allen

Takayuki Suzuki

Daniel Sanders

Pushkara Rao Varanasi

Hiroshi Yamaguchi

Gregory Michael Wallraff

Hiroshi Tomioka

Linda Karin Sundberg

Kuang-Jung Chen

Ken Maruyama

Makoto Shimizu

Kiyoshi Tanaka

C Grant Willson

Yusuke Asano

Yoshikazu Yamaguchi

Haruo Iwasawa

Motoyuki Shima

Toshiyuki Kai

Stephen C Johnson

Takahiro Hayama

Hiromu Miyata

Satoshi Ebata

Kazunori Kusabiraki

Kouichi Fujiwara

Kaori Sakai

Tatsuya Toneri

Thomas I Wallow

Kenichi Hachitani

Ryuichi Serizawa

Hidemitsu Ishida

Katsuji Douki

Kenya Izumi

Kentarou Harada

Shiro Kusumoto

Mark Steven Slezak

Hoa Trung

Frank Palmieri

Michael D Stewart

Atsuko Kataoka

Yuko Kiridoshi

Mahmoud H Khojasteh

Yuusuke Anno

An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

Fluorine-containing polymer, purification method, and radiation-sensitive resin composition

Procedure instruction sequences (P&#x2dc;P) in an instruction sequence (for example, an instruction sequence for an NMR spectrometer) are generated in a precedential manner, and transferred to a procedure storage area on a transmission and reception unit in a precedential manner. After the precedential transfer, a remaining portion of the instruction sequence (streaming instruction sequence (S, . . . )) is sequentially generated in predetermined units from the beginning, and sequentially transferred to a FIFO area on the transmission and reception unit. A sequencer refers to the streaming instruction sequence, executes the instruction, and refers to a procedure instruction sequence on the procedure storage area.

Magnetic resonance measurement apparatus with improved instruction sequence transfer

A radiation-sensitive resin composition includes a first polymer, a second polymer and a radiation-sensitive acid generator. The first polymer has a structure unit represented by a following formula (1-1), a structure unit represented by a following formula (1-2), or both thereof, and has a content of fluorine atoms of no less than 5% by mass to a total mass of the first polymer. The second polymer has an acid-dissociable group, and has a content of fluorine atoms of less than 5% by mass to a total mass of the second polymer. 

Radiation-sensitive resin composition, polymer and method for forming a resist pattern

A liquid immersion lithography upper-layer film-forming composition includes (A) a polymer that includes a structural unit (I) shown by the following formula (1), and (S) a solvent. Rin the formula (1) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. The polymer (A) preferably further includes a structural unit (II) that includes a sulfo group. The polymer (A) preferably further includes a structural unit (III) shown by the following formula (3). Rin the formula (3) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. Rrepresents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom. 

Liquid immersion lithography upper-layer film-forming composition and photoresist pattern-forming method

A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70&#xb0; or more.

An immersion upper layer film composition includes a resin and a solvent. The resin forms a water-stable film during irradiation and is dissolved in a subsequent developer. The solvent contains a monovalent alcohol having 6 or less carbon atoms. The composition is to be applied to form a coat on a photoresist film in an immersion exposure process in which the photoresist film is irradiated through water provided between a lens and the photoresist film.

Immersion upper layer film forming composition and method of forming photoresist pattern

A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises [In the general formulas (1-1) and (1-2), Ris hydrogen or the like; Ris single bonds or the like; and Ris a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

Composition for formation of upper layer film, and method for formation of photoresist pattern

A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.

Method for forming pattern

A radiation-sensitive resin composition includes (A) an acid labile group-containing resin which becomes alkali-soluble by an action of an acid, (B) a radiation-sensitive acid generator, and (C) a solvent. The resin (A) includes repeating units shown by formulas (1) and (2), wherein Rand Rrepresent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, Rrepresents a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, X represents a hydrogen atom, a hydroxyl group, or an acyl group, m represents an integer from 1 to 18, and n represents an integer from 4 to 8.

Radiation-sensitive resin composition

A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography.

Silicon-containing film, resin composition, and pattern formation method

A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography. 

Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern

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Tokyo, Japan

Yukio Nishimura