Nichia Corporation

Other

California Institute of Technology

Yukio Narukawa

Motokazu Yamada

Junya Narita

Shunsuke Minato

Yohei Wakai

Axel Scherer

Isamu Niki

Yoichi Kawakami

Koichi Okamoto

Shigeo Fujita

Mitsuru Funato

Masatsugu Ichikawa

Tomotsugu Mitani

Takao Misaki

Akira Kitano

Masayuki Eguchi

Hiroki Narimatsu

Kazunori Sasakura

Masahito Yamazoe

A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting elementhas a light emitting structure of a semiconductoron a first main surface of a substrate. The first main surface of the substratehas substrate protrusion portion, the bottom surfaceof each protrusion is wider than the top surfacethereof in a cross-section, or the top surfaceis included in the bottom surfacein a top view of the substrate. The bottom surfacehas an approximately polygonal shape, and the top surfacehas an approximately circular or polygonal shape with more sides than that of the bottom surface

Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same

It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the electrical conductivity type of the current pass region on the Si substrate is p-type. Furthermore, in the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the majority carriers of the current pass region of the Si substrate are holes.

Nitride semiconductor element having a silicon substrate and a current passing region

A semiconductor light emitting element having a semiconductor light emitting structure on a first main surface of a substrate, wherein the first main surface of the substrate has a substrate protrusion portion thereon, wherein a bottom surface of a protrusion is wider than a top surface thereof in a cross section of the substrate and the top surface is included in the bottom surface in a top view of the substrate, the bottom surface has an approximately polygonal shape which has a convex portion on each constituent side of the bottom surface, and the top surface has an approximately circular shape.

The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recessesare formed by etching in the first electrically conductive (n) type semiconductor layerformed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

Nitride semiconductor device, and its fabrication process

A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order from the n-side contact layer between the n-side contact layer and the active layer, while at least the second n-side layer and the fourth n-side layer each contain an n-type impurity, and the concentration of the n-type impurity in at least the second n-side layer and the fourth n-side layer is higher than the concentration of the n-type impurity in the first n-side layer and the third n-side layer.

Nitride semiconductor device

The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.

Nitride semiconductor device and a process of manufacturing the same

Growing community of inventors

Tokushima, Japan

Yukio Narukawa