Hitachi, Ltd.

Yukio Nakagawa

Masato Isogai

Tadashi Sato

Youichi Ohshita

Isao Takahashi

Takayoshi Seki

Terunori Warabisako

Eiji Setoyama

Yoshio Yoshioka

Mitsuhiro Kamei

Keiji Arimatsu

Kiyoshi Miyake

Yasunori Ohno

Kenichi Natsui

Ken-ichi Natsui

Minoru Sato

Koukichi Ouhata

Takanao Kurasawa

This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.

Method and apparatus for forming a film

A magnetron sputter apparatus according to the present invention is constructed so as to satisfy a predetermined optimum relationship between the size of the erosion area on the surface of the target and that of a film forming region. Further, the distance between the target and substrates has a value predetermined for the relationship between the size of the erosion area on the surface of the target and that of the film forming region. By using the magnetron sputter apparatus according to the present invention it is possible to form a homogeneous thin film excellent in step coverage and having a film thickness distribution in which variations are small over a large area.

Magnetron sputter apparatus and method for forming films by using the

A puffer type gas circuit breaker comprises a first and a second arcing electrodes movable relative to each other, an insulating nozzle surrounding the second arcing electrode, a puffer device for introducing an arc-suppressing gas into the insulating nozzle to puff out the arc produced between the two arcing electrodes when the breaker is in motion for circuit breaking, and a movable shield device for relieving the concentration of an electric field at the front end of the first arcing electrode during the breaker motion for circuit breaking. When the breaker is closed and the circuit made, the movable shield device surrounds the first arcing electrode and insulating nozzle, with a predetermined gap between itself and the insulating nozzle opposite thereto, and is kept at the same potential as the first arcing electrode. The circuit breaker further includes a device for maintaining the predetermined gap and the same potential at least in the early stage of the breaker motion for current breaking.

Puffer type gas circuit breaker

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Daito, Japan

Yukio Nakagawa