Sumco Corporation

Yukio Komatsu

Yoshiro Aoki

Seiichi Nakamura

Tetsuya Nakai

Naoshi Adachi

Riyuusuke Kasamatsu

A method for manufacturing SIMOX wafer, wherein roughness (Rms) of an SOI layer and roughness (Rms) of an interface between the SOI layer and a BOX layer can be reduced. The method includes forming a first ion-implanted layer containing highly concentrated oxygen within a wafer; forming a second ion-implanted amorphous layer; and a high temperature heat treatment, transforming the first and second ion-implanted layers into a BOX layer by holding the wafer at a temperature between 1300&#xb0; C. or more and a temperature less than a silicon melting point in an atmosphere containing oxygen, wherein when a first dose amount in forming the first ion-implanted layer is set to 2&#xd7;10to 3&#xd7;10atoms/cm, the first implantation energy set to 165 to 240 keV and a second dose amount in forming the second ion-implanted layer is set to 1x10to 1x10atoms/cm.

Method for manufacturing simox wafer

A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300&#xb0; C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.

Method for manufacturing SIMOX wafer

A manufacturing method for a SIMOX substrate for obtaining a SIMOX substrate by subjecting a silicon substrate having oxygen ions implanted thereinto by heat treatment at 1300 to 1350&#xb0; C. in an atmosphere of a gas mixture of argon and oxygen, the method includes: performing a pre-heat-treatment to the silicon substrate for five minutes to four hours within the temperature range of 1000&#xb0; C. to 1280&#xb0; C. in an atmosphere of inert gas, reducing gas, or a gas mixture of inert gas and reducing gas, after the oxygen ions are implanted and before the heat treatment is performed.

Manufacturing method for SIMOX substrate

This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300&#xb0; C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300&#xb0; C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350&#xb0; C. and a maximum temperature is 1350&#xb0; C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 &#x212b; or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-&#x3bc;m square area of 4 &#x212b; rms or less.

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Tokyo, Japan

Yukio Komatsu