Sony Corporation

Yukio Kinoshita

Hisao Hayashi

Tetsuo Urabe

Hideo Kataoka

Takayuki Fujioka

Yuko Inoue

Tadakuni Narabu

Masahide Hirama

Ying Bao Yang

Yang Ying Bao

An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate ( ). Pixel electrodes ( ) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode ( ), an insulating film ( ) formed on the gate electrode ( ), a polycrystalline semiconductor layer ( ) formed on the insulating layer ( ), and a high concentration impurity layer constituting a source ( ) and a drain ( ) formed on the polycrystalline semiconductor layer ( ). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer ( ) is interposed between the polycrystalline semiconductor layer ( ) and the high concentration impurity layer ( ).

Thin film semiconductor device for display and method of producing same

A reflective display device includes a panel, a light guide plate and a light source. The panel is provided with a transparent first substrate lying on the side of the external incident light, a second substrate joined to the first substrate with a predetermined gap therebetween and lying on the reflection side, a guest-host liquid crystal layer held in the gap between the substrates, and electrodes provided on each substrate for applying a voltage to the guest-host liquid crystal layer. The light guide plate is composed of a transparent material and is arranged on the outside of the first substrate. The light source is arranged on the end of the light guide plate and generates illumination light as required. The light guide plate normally transmits external light onto the first substrate and emits the external light reflected from the second substrate, and also, as required, guides illumination light onto the first substrate and emits the illumination light reflected from the second substrate.

Reflective liquid crystal display device with a panel, a light guide plate and polarizing plate

An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (3) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurity layer (7).

Thin film semiconductor device for display

A reflection type display device includes a panel, a light guide plate placed external to the panel, and a light source placed at the end of the light guide plate for generating illumination light as required. The light guide plate normally transmits external light onto a first substrate of the panel and emits the external light reflected from a second substrate of the panel, while, as required, guides illumination light onto the first substrate and emits the illumination light reflected from the second substrate. The light guide plate includes a planar section divided into bands and an inclined section lying between each planar section. The light guide plate reflects the illumination light guided from the light source at each inclined section so as to lead it onto the first substrate and emits the illumination light reflected from the second substrate through each planar section and inclined section. The width of the planar section is set to 15 or more times, or preferably 20 or more times, the width of the inclined section.

Reflection type display with light waveguide with inclined and planar

A contact image sensor has a plurality of line sensors. Each of these line sensors is mounted adjacent to an optical block having the function of refracting or reflecting the light incident on a first surface and causing the light to exit at another surface along one of a plurality of light paths divided from the incident light path. A plurality of line sensors are provided on the other ends without being arrayed on one and the same straight line. This enables in-line data to be read out accurately, while enabling the contact image sensor to be assembled more easily than in the case of the prior-art technique.

Multi-chip type contact image sensor

Disclosed is a semiconductor device, such as a solid-state imager or a delay line, having its body and a peripheral circuit formed on the same chip, in which the peripheral circuit is divided into segments and dispersedly arranged around the body of the device. Such an arrangement reduces influence of dark current on the signal, which has been an outstanding problem encountered in such a semiconductor device.

Growing community of inventors

Kanagawa, Japan

Yukio Kinoshita