Tokyo Electron Limited

Yukio Kiba

Norio Semba

Keizo Hasebe

Kunie Ogata

Keiichi Tanaka

Shuuichi Nishikido

Masatoshi Shiraishi

Takahiro Okubo

Tetsushi Miyamoto

Norifumi Sato

Tetsutoshi Awamura

Kazuhisa Hasebe

The present invention is a method of developing a resist film on a substrate using a developing solution at a predetermined temperature lower than room temperature, including a first cooling step of mounting and cooling the substrate on a cooling plate at a temperature lower than room temperature and higher than the predetermined temperature in a cooling apparatus; a second cooling step of then carrying the substrate into a developing apparatus and supplying a rinse solution at the predetermined temperature or lower onto the substrate to cool the substrate in the developing apparatus; a developing step of then supplying the developing solution onto the substrate and developing the resist film on the substrate to form a resist pattern in the resist film; and a cleaning step of then supplying a rinse solution at the predetermined temperature onto the substrate to clean a front surface of the substrate.

Developing treatment method, program, computer storage medium and developing treatment system

Rinsing nozzlestoare moved on a wafer W while they are discharging rinsing solution. At that point, discharging openingstoare contacted to developing solutioncoated on the wafer W or rinsing solutionon the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solutioncan push away the developing solution

Substrate processing device, substrate processing method, and developing device

A resist processing system includes a sensor connected for detecting the surface level of the processing solution contained in an intermediate tank, and a controller connected for controlling the fluid pressure on the basis of the surface level detected by the sensor.

Resist processing system having process solution deaeration mechanism

A coating film forming method for forming a resist coating film on an upper surface of a wafer held by a spin chuck in a chamber includes (a) the step of keeping preliminary correlation data representing correlation between a wafer rotating speed and the thickness of the resist coating film formed on the wafer in the chamber, (b) the step of conveying the wafer into the chamber and holding the wafer by the spin chuck, (c) the step of pouring the resist liquid onto the wafer and spin-rotating the wafer to form a resist coating film on the upper surface of the wafer, (d) the step of detecting the thickness of the formed resist coating film by a sensor, (e) the step of detecting a rotating speed of the spin chuck by a sensor, and (f) the step of, on the basis of the detected film thickness and the preliminary correlation data, correcting a set rotating speed of the spin chuck to feedback-control a resist coating process for a next wafer.

Coating film forming method and coating film forming apparatus

A resist processing method for introducing a pressurized gas into a vessel storing a solution, sending the solution from the vessel to a nozzle by way of a supply line by means of the pressurized gas, and supplying the solution from the nozzle to a substrate.

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Koshi, Japan

Yukio Kiba