Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Yukio Kaneda

Fumihiko Koga

Hideaki Togashi

Shintarou Hirata

Toshiki Moriwaki

Tetsuji Yamaguchi

Taiichiro Watanabe

Yoshihiro Ando

Toyotaka Kataoka

Satoshi Keino

Ryoji Arai

Yosuke Saito

Masashi Bando

Yoshiyuki Hirano

Kenichi Murata

Hideki Ono

Masahiro Joei

Nobuyuki Kuboi

Nobuhiro Kawai

An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.

Imaging element and imaging apparatus

A solid-state imaging device () according to the present disclosure includes a photoelectric conversion portion () including a first electrode (), a photoelectric conversion layer () electrically connected to the first electrode (), and a second electrode () provided on a surface on a light incidence side of the photoelectric conversion layer (). The photoelectric conversion layer () has a protrusion region () that protrudes from the second electrode () when seen in a plan view.

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

Imaging device and solid-state image sensor

Provided is a photoelectric conversion element includes two electrodes forming a positive electrode and a negative electrode, at least one charge blocking layer arranged between the two electrodes, and a photoelectric conversion layer arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer or a hole blocking layer, and a potential of the charge blocking layer is bent.

Photoelectric conversion element, measuring method of the same, solid-state imaging device, electronic device, and solar cell

A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a type identical to a type of charge accumulated in the charge accumulation unit.

Solid-state imaging device and electronic apparatus

The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.

Photoelectric conversion element, method of manufacturing the same, solid state image sensor, electronic device, and solar cell

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus

A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

Solid-state imaging element and solid-state imaging device

The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode () and a negative electrode (), at least one charge blocking layer () arranged between the two electrodes, and a photoelectric conversion layer () arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer () or a hole blocking layer (), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

Imaging device having a plurality of electrodes with a photoelectric conversion layer forming a photoelectric conversion unit

An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, in which an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and the inorganic oxide semiconductor material layer includes at least two types of elements selected from the group consisting of indium, tungsten, tin, and zinc. Alternatively, a LUMO value Eof a material included in a part of the photoelectric conversion layer positioned near the inorganic oxide semiconductor material layer and a LUMO value Eof a material included in the inorganic oxide semiconductor material layer satisfy E-E&#x3c;0.2 eV. Alternatively, the mobility of a material included in the inorganic oxide semiconductor material layer is equal to or greater than 10 cm/V&#xb7;s.

Growing community of inventors

Kanagawa, Japan

Yukio Kaneda