Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Kyocera Document Solutions Inc.

Yukio Iwasaki

Hidekazu Nakanishi

Hiroyuki Nakamura

Ryouichi Takayama

Takashi Inoue

Tsuyoshi Tanaka

Daisuke Ueda

Ryoichi Takayama

Yosuke Hamaoka

Hidetoshi Furukawa

Tetsuo Kawasaki

Kouji Hasegawa

Tetsuya Tsurunari

Ken Matsunami

Hiroki Kamiguchi

Life of a non-volatile memory is extended without increasing processing time due to turning power ON/OFF. An EEPROM stores counter information and setting information, a first RAM and a second RAM store counter information and setting information, a memory management unit manages a storage area in the first RAM for the counter information and setting information so as to be updatable and manages a storage area in the second RAM for the counter information and setting information so as not to be updatable, and a system control unit, when a change in contents of the counter information and the setting information occurs, rewrites the counter information and the setting information in the first RAM in accordance to the changed contents, and when the power is turned OFF, reads and compares the counter information and the setting information in the first RAM with the counter information and the setting information in the second RAM, and writes only different data to the EEPROM.

Memory system and electronic apparatus

A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.

Surface acoustic wave device and manufacturing method of the same surface acoustic wave device

A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p, a width between the electrode fingers is p, and a thickness of the IDT is h, following relations are satisfied, p+p=p, and h/(2&#xd7;p)&#x2267;4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

Surface acoustic wave device, surface acoustic wave filter and antenna duplexer using the same, and electronic equipment using the same

The present invention provides a surface acoustic wave resonator capable of improving a leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiOthin film is formed on at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, such that the SiOthin film is removed from upper sections of the bus-bar electrode regions of the interdigital transducer electrode.

Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used

An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length &#x3bb; of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/&#x3bb;&#x2267;0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.

Elastic wave element containing a silicon oxide film and a silicon nitride oxide film

An electronic part, an object of which is to improve temperature characteristics and electrical properties, includes a substrate (), a comb-type electrode () that is disposed on the upper surface of the substrate (), and a protective film () that covers the comb-type electrode () and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film () is L, the width of one pitch of a convex portion () of the unevenness in the uneven shape of the protective film () is L, the width of one pitch of a concave portion () thereof is L, the pitch width of one pitch of the comb-type electrode () is p, the width of one of electrode fingers which form the comb-type electrode () is pand the width between the electrode fingers is p, then each parameter is set so that the following expressions are satisfied, L&#x2266;pand L&#x2267;p(herein, the correlations of L&#x2248;p, p+p=p and L+L=L are satisfied).

Electronic part and electronic equipment with electronic part

An electronic part includes a substrate, a comb-shaped electrode having a plurality of electrode fingers arranged parallel to one another on the upper surface of the substrate, and a protective film formed on the upper surface of the substrate so as to cover the comb-shaped electrode. The protective film has convex portions and concave portions. The convex portions are upwardly convex at the positions corresponding to the electrode fingers, and the concave portions are downwardly concave between the convex portions. The cross section of the protective film in the direction orthogonal to the extending direction of the electrode fingers has a downward convex curve between apex portions of the convex portions.

Electronic part utilizing a protective film on a comb-shaped electrode

An electronic part, object of which is to improve temperature characteristics and electrical properties, includes a substrate (), a comb-type electrode () that is disposed on the upper surface of the substrate (), and a protective film () that covers the comb-type electrode () and has an uneven shape at its top surface. If the pitch width of one pitch in the uneven shape of the protective film () is L, the width of one pitch of a convex portion () of the unevenness in the uneven shape of the protective film () is L, the width of one pitch of a concave portion () thereof is Lthe pitch width of one pitch of the comb-type electrode () is p, the width of one of electrode fingers which form the comb-type electrode () is pand the width between the electrode fingers is pthen each parameter is set so that the following expressions are satisfied, L&#x2266;pand L&#x2267;p(herein, the correlations of L&#x2248;p, ppp and LLL are satisfied).

Electronic part with a comb electrode and protective film and electronic equipment including same

A plurality of surface acoustic wave resonators including a comb electrode and a grating reflector are coupled on a piezoelectric substrate. Dielectric film is formed on the surface of at least one surface acoustic wave resonator. No dielectric film is formed on the surface of at least one other surface acoustic wave resonator. Thus, a SAW filter where the insertion loss into a pass band is small, the steepness is sufficient, and the band is wide can be obtained.

Surface acoustic wave filter, and saw duplexer

A regulating resistor network includes a plurality of resistors connected in parallel to each other. Each of these resistors is cuttable by being irradiated with light, and a resistance value of the regulating resistor network is adjustable by cutting at least one of the resistors off.

Growing community of inventors

Osaka, Japan

Yukio Iwasaki