Sumitomo Electric Industries, Limited

Yukio Ishikawa

Hidetoshi Takayama

Katsushi Akita

Makoto Kiyama

Hiroshi Fukunaga

Katsushi Hashio

Hirokazu Oota

Shinya Kawamoto

Shuuichi Kaneko

A gallium arsenide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is a gallium arsenide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.

Gallium arsenide single crystal and gallium arsenide single crystal substrate

A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5&#xd7;10&#x3a9;&#xb7;cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.

Semi-insulating gallium arsenide crystal substrate

In a gallium arsenide crystal body, an etching pit density of the gallium arsenide crystal body is more than or equal to 10 cmand less than or equal to 10000 cm, and an oxygen concentration of the gallium arsenide crystal body is less than 7.0&#xd7;10atoms&#xb7;cm. In a gallium arsenide crystal substrate, an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cmand less than or equal to 10000 cm, and an oxygen concentration of the gallium arsenide crystal substrate is less than 7.0&#xd7;10atoms&#xb7;cm.

Gallium arsenide crystal body and gallium arsenide crystal substrate

A GaAs-based compound semiconductor crystal includes a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 100 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, and a ratio R/Rof a specific resistance Rat the second end surface side to a specific resistance Rat the first end surface side is more than or equal to 1 and less than or equal to 2.

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Osaka, Japan

Yukio Ishikawa