Advanced Display, Inc.

Yukio Endo

Takafumi Hashiguchi

Satoshi Kohtaka

Nobuhiro Nakamura

Ikuo Ogo

The liquid crystal display of the present invention includes: a first insulating substrate as an array substrate; display pixels formed in such a manner as to be arranged in array like shape on the first insulating substrate, said display pixels having pixel electrodes electrically connected to each other; a counter substrate formed on a second insulating substrate on which common electrodes are formed; a liquid crystal layer interposed between the first insulating substrate and the second insulating substrate, the first insulating substrate and the second insulating substrate being bonded each other; a transfer electrode for supplying a common electrical potential to common electrodes on the second insulating substrate through a conductive material; wherein the transfer electrode is formed by patterning a conductive thin film that has been formed by the last conductive film forming process of the first insulating substrate; wherein a second conductive metal film, which has been formed in the second conductive film forming process of the first insulating substrate, and is connected to the common electrode potential, and the conductive thin film are connected to each other on the periphery of the transfer electrode through a contact hole or through a direct contact, and the conductive thin film is directly formed on the first insulating substrate at one portion of the center portion of the opening of the transfer electrode.

Liquid crystal display device

A method for manufacturing electo-optic elements includes steps of: (a-1) forming gate electrodes of the gate line and the TFT by patterning the first metal thin film by the first photolithography process after forming the first metal thin film on the first insulating substrate, (a-2) patterning by dry etching the semiconductor active film and the ohmic contact film by the second photolithography process in the larger and continuous form than the portion in which the source line and the TFT are formed after forming the first insulating film, semiconductor active film, and ohmic contact film, (a-3) patterning the second metal thin film by the third photolithography process after forming the second metal thin film to form the source electrode and the drain electrode of the source line as well as the TFT and in addition, etch-removing by dry etching the ohmic contact film protruding from the source line, source electrode, and drain electrode, (a-4) patterning the second insulating film and the first insulating film in the fourth photolithography process after forming the second insulating film, and forming a pixel contact hole that penetrates at least to the drain electrode surface, the first contact hole that penetrates to the first metal film surface, and the second contact hole that penetrates the second metal film surface, and (a-5) patterning the conductive thin film and forming the pixel electrode by the fifth photolithography process after forming the conductive thin film.

Growing community of inventors

Kikuchi-gun, Japan

Yukio Endo