Nec Corporation

Tokuyama Corporation

Yukinori Ochiai

Masahiko Ishida

Jun-ichi Fujita

Takashi Ogura

Junji Momoda

Toshitsugu Sakamoto

Hisashi Takemura

Hisao Kawaura

Hitoshi Wakabayashi

Junichi Fujita

Atsushi Ogura

Risho Koh

Fumiyuki Nihey

Hiroo Hongo

Toshio Baba

Tohru Mogami

Shinji Matsui

Yukishige Saito

Shigeharu Yamagami

Toyoji Yamamoto

Mitsuru Narihiro

Jong-Wook Lee

Kohichi Arai

Shoko Manako

Toshinari Ichihashi

Eiji Oshima

An amorphous carbon rod () is formed in contact with a catalyst fine particle (). The fine particle () is liquefied by heat treatment, and moved along the amorphous carbon rod (). The trail of the movement is converted to a carbon nanotube.

Method of producing a carbon nanotube and a carbon nanotube structure

There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

Semiconductor device and its manufacturing method

The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.

Resist and method of forming resist pattern

A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.

SOI MOSFET

The method for forming a fine pattern on a substrate disclosed includes a step of preparing a hologram having a pattern, a step of irradiating material waves (de Broglie waves) such as neutral beams, ion beams and electron beams on the hologram, and a step of imaging the pattern on the substrate with the material waves being interfered by passing through the hologram. The light source has a source that emits a beam having a coherent wave front. Since the fine patterns are formed by utilizing the interference of material waves, the minimum processing precision can be enhanced to the extent of the wavelength of the material wave.

Method and system for forming fine patterns using hologram

An in-lens type objective lens is separated into two parts along the plane perpendicular to the direction of electron or ion orbit, so that a target sample can placed between the upper part and the lower part of the lens. Coils for the two parts are serially connected so as to work as one coil. Each of the upper and lower parts of the lens is provided with a lens positioning device. If the in-lens type objective lens is of a three-piece electrostatic type, a structure is provided which enables a target sample to be placed between a first and second electrode group and the third electrode.

Objective lens and charged particle beam system

For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydrofluoric acid, whereby the ion-irradiated and hydrofluoric-acid-treated portion forms a photoluminescence layer.

Method for forming photoluminescence layer on a semiconductor layer by

Growing community of inventors

Tokyo, Japan

Yukinori Ochiai