Kabushiki Kaisha Toshiba

Yukinori Koyama

Hiroyuki Kanaya

Susumu Shuto

Kuniaki Sugiura

A semiconductor memory device according to embodiments includes a semiconductor substrate and plural switching transistors provided on the semiconductor substrate. In the semiconductor memory device, a contact plug is embedded between adjacent two of the switching transistors, and is insulated from gates of the adjacent two switching transistors. The contact plug is also electrically connected to a source or a drain of each of the adjacent two switching transistors, and an upper surface of the contact plug is at a position higher than an upper surface of the switching transistors. A memory element is provided on the upper surface of the contact plug and stores data. A wiring is provided on the memory element.

Growing community of inventors

Yokohama, Japan

Yukinori Koyama